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  • 1
    Electronic Resource
    Electronic Resource
    Structural and electrical characterization of heteroepitaxial lead zirconate titanate thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 393-402 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbZrxTi1−xO3 films have been grown heteroepitaxially onto (001)SrTiO3 and SrRuO3/(001)SrTiO3 by organometallic chemical vapor deposition. As a start, the microstructure of PbZrxTi1−xO3 films on (001)SrTiO3 was studied as a function of the zirconium fraction, x. Rutherford backscattering spectrometry, including channeling experiments, and transmission electron microscopy have shown that the microstructure is dominated by the crystal structure of the PbZrxTi1−xO3. In the case of tetragonal PbZrxTi1−xO3 the films may contain a-axis oriented regions. These regions have not been observed for films with a composition giving a rhombohedral unit cell. Despite the rather large mismatch of rhombohedral PbZrxTi1−xO3 with the (001)SrTiO3, values as low as 4% for the minimum channeling yield have been obtained. For a rhombohedral film the ferroelectric properties have been measured. To this end a single crystalline PbZr0.8Ti0.2O3 film was grown onto (001)SrTiO3 provided with a heteroepitaxial SrRuO3 electrode grown by pulsed-laser deposition. A heteroepitaxial top electrode was grown onto the PbZrxTi1−xO3 using the same technique. The channeling minimum yield of the heteroepitaxial stack was 11%. The hysteresis loop saturates already at 1 V. Endurance up to 1012 cycles was observed without severe degradation of the ferroelectric properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360843
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  • 2
    Electronic Resource
    Electronic Resource
    Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2777-2783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence of Ec and a good endurance up to 1011 cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase of Ec with decreasing thickness of the ferroelectric layer. We show that charge injection can explain the experimentally observed increase of Ec with decreasing ferroelectric layer thickness. An overview is given of the growth conditions needed for PbZr0.53Ti0.47O3 films, because the precise stoichiometry is of the utmost importance for the capacitor quality. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363961
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  • 3
    Electronic Resource
    Electronic Resource
    Texture analysis of smooth in situ laser ablated YBa2Cu3O7 thin films on (100) SrTiO3 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6507-6509 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of YBa2Cu3O7 thin films on (100) SrTiO3, grown by in situ laser ablation, was investigated by x-ray diffraction. The surface morphology is smooth with only 105 cm−2 particulates of about 0.1 μm in diameter. High-resolution x-ray diffraction shows that the c-axis of YBa2Cu3O7 is epitaxially aligned with the [001] direction of SrTiO3 irrespective of the misorientation. The {018} pole figure of YBa2Cu3O7 shows a fourfold symmetry which indicates that the films are ordered with respect to the substrate lattice. Moreover, the alignment in the {018} pole figure of the (220) reflections of SrTiO3 and the (018) reflections of YBa2Cu3O7 indicates that over the whole surface of the film the a- and b-axes of YBa2Cu3O7 are aligned along the [100] and [010] direction of SrTiO3. The epitaxial nature of the films, the low density of particulates, and the lack of interdiffusion as concluded from secondary ion mass spectrometry measurements, allows for the preparation of heteroepitaxial stacks containing high-Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346851
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  • 4
    Electronic Resource
    Electronic Resource
    Improved uniformity of multielement thin films prepared by off-axis pulsed laser deposition using a new heater design (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3229-3237 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new compact substrate heater for the pulsed laser deposition (PLD) technique has been developed. The heater is built up of a radiation part, consisting of two quartz halogen lamps, and a rotating absorber, made of a SiC disk, to which the substrate is attached. The advantage of this system in comparison to conventional heaters is its suitability for substrate temperatures up to 800 °C in any ambient (vacuum as well as corrosive gases). The heater is applied for the deposition of thin, multielement films with improved thickness uniformity using off-axis PLD. This technique makes use of a rotating substrate which is off-centered from the depositing plasma plume. The thickness profile is modeled using predetermined stationary thickness distributions. For a variety of multielement materials good experimental uniformities in terms of thickness (in close agreement with the calculations) and of chemical composition are obtained. A relation is found between the value of experimental parameters and the achievable uniformity area within a large pressure range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147447
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  • 5
    Electronic Resource
    Electronic Resource
    Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 888-893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping. In addition to bulk parameters (the carrier effective mass and mean free path) the model contains grain boundary parameters (barrier height and width) and a coefficient of current nonuniformity. Temperature-dependent conductivity and Hall measurements on polycrystalline SnO2 thin films with different Sb concentrations are consistently interpreted. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366773
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  • 6
    Electronic Resource
    Electronic Resource
    Depletion-type thin-film transistors with a ferroelectric insulator (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 458-460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118180
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  • 7
    Electronic Resource
    Electronic Resource
    A ferroelectric transparent thin-film transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3650-3652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8O3 as a ferroelectric insulator, and SrRuO3 as a gate electrode, each layer prepared by pulsed laser deposition. The hysteresis behavior of the channel conductance is studied. Using gate voltage pulses of 100 μs duration and a pulse height of ±3 V, a change of a factor of two in the remnant conductance is achieved. The dependence of the conductance on the polarity of the gate pulse proves that the memory effect is driven by the ferroelectric polarization. The influence of charge trapping is also observed and discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115759
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  • 8
    Electronic Resource
    Electronic Resource
    Field dependent permittivity in metal-semiconducting SrTiO3 Schottky diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 697-699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field dependence of the dielectric constant of SrTiO3 is investigated using the capacitance versus bias voltage characteristics of various metal-SrTiO3:Nb Schottky diodes. The relative dielectric constant is shown to decrease one order of magnitude for electric fields ranging from 0.1 to 10 MV/cm. At low fields the permittivity follows the Curie–Weiss law, whereas at fields larger than 500 kV/cm the permittivity is nearly temperature independent. At high doping densities the field dependent permittivity gives rise to a reduction of the depletion width of the Schottky diode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114103
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial PbTiO3 thin films grown by organometallic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2636-2638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial PbTiO3 layers have been grown on (001)SrTiO3 substrates by organometallic chemical vapor deposition using the precursors titanium-iso-propoxide and tetra-ethyl-lead. The growth temperature for these films was around 700 °C. The epitaxial nature of c-axis-oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry, x-ray diffraction, including pole figure analysis, and high-resolution electron microscopy (HREM). With HREM twinning has been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104792
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  • 10
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    Epitaxial PbTiO3thin films grown by organometallic chemical vapor deposition (1991)
    American Institute of Physics
    Details
    Publication Date: 1991-06-10
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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