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  • 1
    Electronic Resource
    Electronic Resource
    Microstructure of Cu-Rich CuGaSe〈sub〉2〈/sub〉 Thin Films (1999)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 67-68 (Apr. 1999), p. 397-402 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.397.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Computer modeling of carrier transport in PbSnSe photodiodes
    Amsterdam : Elsevier
    Infrared Physics and Technology 35 (1994), S. 837-845 
    Details
    ISSN: 1350-4495
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1350-4495(94)90049-3
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  • 3
    Electronic Resource
    Electronic Resource
    Monolithic heteroepitaxial infrared sensor arrays on Si for thermal imaging applications
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 22 (1989), S. 461-464 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(89)80015-9
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  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelength (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 969-971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An array of photovoltaic infrared sensors with 12 μm cutoff wavelength has been fabricated for the first time in a narrow-gap semiconductor layer grown heteroepitaxially on Si. Heteroepitaxy is achieved using intermediate stacked epitaxial CaF2-SrF2-BaF2 buffer layers to overcome the large lattice as well as thermal expansion mismatch between narrow-gap Pb1−xSnxSe and Si. The IR sensors exhibit resistance-area products up to 0.3 Ω cm2 at 77 K. This corresponds to sensitivities which are above the 300 K background noise limit and only 2–5 times lower than those of state of the art Hg1−xCdxTe sensors on CdZnTe substrates with the same cutoff wavelengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101692
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  • 5
    Electronic Resource
    Electronic Resource
    Direct growth of heteroepitaxial CuInSe2 layers on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2299-2301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si substrates by molecular beam epitaxy. Epitaxial growth is achieved by using a proper thermal treatment of the substrate prior to the growth and also during the initial stage of CIS growth. (100)-oriented and (112)-oriented CIS layers with chalcopyrite crystal structure, and free from impurity phases have been obtained on Si(100) and Si(111), respectively. Different methods have been used to study the growth kinetics and structural quality of the epitaxial layers. Twinning in (112)-oriented CIS layers depends on the deposition recipe. A Rutherford backscattered ion channeling minimum yield of about 13%, and an x-ray rocking-curve width of about 900 arcsec have been measured for a 0.4 μm thick heteroepitaxial CIS(112) layer on Si(111) substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112723
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  • 6
    Electronic Resource
    Electronic Resource
    Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1911-1916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of PbSe on (111)- and (100)-oriented Si substrates without an intermediate buffer layer is studied. It is found that on Si(111) the orientation of the IV-VI layer can by varied from (100) at 200 °C to (111) at 400 °C substrate temperature. On Si(100), only (100)-oriented layers were obtained for the whole temperature range. (100)-oriented layers with thicknesses above 0.5 μm were cracked due to thermally induced mechanical strain on cooldown to room temperature. This strain cannot be relaxed by dislocation glide in the first glide systems as it is the case for (111)-oriented layers. The structural quality of (100)-oriented PbSe layers on Si(100) and Si(111) is inferior compared to layers grown with an intermediate BaF2/CaF2 or CaF2 buffer layer. This implies that the covalent/ionic PbSe/Si interface seems to impede high-quality epitaxy, contrary to the well known ionic/ionic IV-VI/IIa-fluoride interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361076
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  • 7
    Electronic Resource
    Electronic Resource
    Rotational twins in heteroepitaxial CuInSe2 layers on Si(111) (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6100-6106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of (112) oriented CuInSe2 heteroepitaxial layers grown with molecular beam epitaxy on (111) oriented Si wafers was investigated by transmission electron microscopy. Experimental and calculated diffraction patterns of different zone axes were compared. Extra spots are caused by rotational twins on (112) growth planes. Six twin variants rotated by ±120°, ±60° and 180° about the [221] axis were identified in the layers. The tetragonal chalcopyrite structure of CuInSe2, the crystal symmetry of the substrate and variations of the growth conditions during the growth are responsible for the formation of these rotational twins. Coherent twin boundaries as well as partly coherent boundaries of twin variants rotated by ±60° and 180° were imaged by high resolution transmission electron microscopy. The boundaries can be formed by inserting partial dislocations with Burgers vectors a/6〈111¯〉 into the CuInSe2 structure. This suggests that the annealing of the samples induces the annihilation of these partial dislocations and consequently reduces the density of twins in the CuInSe2 layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364359
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of superconducting YBa2Cu3O7−x on Si(100) with CaF2 as intermediate buffer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5095-5098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial superconducting YBa2Cu3O7−x (YBCO) thin films have been grown on Si(100) using CaF2 as an intermediate buffer layer. The CaF2(100) layers were grown by molecular beam epitaxy while for the YBCO layers a laser ablation process was used. Electron channeling patterns of the YBCO surface show the characteristic four-fold symmetry for c-axis orientation. The epitaxial relationship is (001)YBCO//(001)Si and [010]YBCO//[110]Si. This corresponds to a lattice mismatch of only 1% in the a-b-YBCO interface plane. The 60-nm-thick layers are crack free. Magnetic shielding properties of the epitaxial YBCO layers have been studied by measuring the zero temperature penetration depth λab(0) and the power law dependence of the transition temperature versus magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350611
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  • 9
    Electronic Resource
    Electronic Resource
    Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3364-3367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of p-n+ junctions in PbTe layers on Si(111) grown by molecular beam epitaxy are described. The temperature dependence of the leakage currents and ideality factors show that the junctions are generation-recombination limited over the 300–100 K range. The lifetimes deduced for the minority carriers (about 0.1 ns) suggest that their diffusion length is limited by the density of the threading dislocations, which was about 108 cm−2 for these heavily lattice mismatched layers. The theoretical diffusion limit at 200 K would be attained by reducing the dislocation density by a factor of 100. Such low densities have already been obtained in lead–chalcogenide layers on Si substrates by temperature cyclings. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369685
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1512-1514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 A(ring). Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100432
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