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  • 1
    Electronic Resource
    Electronic Resource
    Direct growth of heteroepitaxial CuInSe2 layers on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2299-2301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si substrates by molecular beam epitaxy. Epitaxial growth is achieved by using a proper thermal treatment of the substrate prior to the growth and also during the initial stage of CIS growth. (100)-oriented and (112)-oriented CIS layers with chalcopyrite crystal structure, and free from impurity phases have been obtained on Si(100) and Si(111), respectively. Different methods have been used to study the growth kinetics and structural quality of the epitaxial layers. Twinning in (112)-oriented CIS layers depends on the deposition recipe. A Rutherford backscattered ion channeling minimum yield of about 13%, and an x-ray rocking-curve width of about 900 arcsec have been measured for a 0.4 μm thick heteroepitaxial CIS(112) layer on Si(111) substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112723
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  • 2
    Electronic Resource
    Electronic Resource
    Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1911-1916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of PbSe on (111)- and (100)-oriented Si substrates without an intermediate buffer layer is studied. It is found that on Si(111) the orientation of the IV-VI layer can by varied from (100) at 200 °C to (111) at 400 °C substrate temperature. On Si(100), only (100)-oriented layers were obtained for the whole temperature range. (100)-oriented layers with thicknesses above 0.5 μm were cracked due to thermally induced mechanical strain on cooldown to room temperature. This strain cannot be relaxed by dislocation glide in the first glide systems as it is the case for (111)-oriented layers. The structural quality of (100)-oriented PbSe layers on Si(100) and Si(111) is inferior compared to layers grown with an intermediate BaF2/CaF2 or CaF2 buffer layer. This implies that the covalent/ionic PbSe/Si interface seems to impede high-quality epitaxy, contrary to the well known ionic/ionic IV-VI/IIa-fluoride interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361076
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  • 3
    Electronic Resource
    Electronic Resource
    Rotational twins in heteroepitaxial CuInSe2 layers on Si(111) (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6100-6106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of (112) oriented CuInSe2 heteroepitaxial layers grown with molecular beam epitaxy on (111) oriented Si wafers was investigated by transmission electron microscopy. Experimental and calculated diffraction patterns of different zone axes were compared. Extra spots are caused by rotational twins on (112) growth planes. Six twin variants rotated by ±120°, ±60° and 180° about the [221] axis were identified in the layers. The tetragonal chalcopyrite structure of CuInSe2, the crystal symmetry of the substrate and variations of the growth conditions during the growth are responsible for the formation of these rotational twins. Coherent twin boundaries as well as partly coherent boundaries of twin variants rotated by ±60° and 180° were imaged by high resolution transmission electron microscopy. The boundaries can be formed by inserting partial dislocations with Burgers vectors a/6〈111¯〉 into the CuInSe2 structure. This suggests that the annealing of the samples induces the annihilation of these partial dislocations and consequently reduces the density of twins in the CuInSe2 layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364359
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of superconducting YBa2Cu3O7−x on Si(100) with CaF2 as intermediate buffer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5095-5098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial superconducting YBa2Cu3O7−x (YBCO) thin films have been grown on Si(100) using CaF2 as an intermediate buffer layer. The CaF2(100) layers were grown by molecular beam epitaxy while for the YBCO layers a laser ablation process was used. Electron channeling patterns of the YBCO surface show the characteristic four-fold symmetry for c-axis orientation. The epitaxial relationship is (001)YBCO//(001)Si and [010]YBCO//[110]Si. This corresponds to a lattice mismatch of only 1% in the a-b-YBCO interface plane. The 60-nm-thick layers are crack free. Magnetic shielding properties of the epitaxial YBCO layers have been studied by measuring the zero temperature penetration depth λab(0) and the power law dependence of the transition temperature versus magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350611
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2-CaF2 as a buffer (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1108-1110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CdTe (100) has been grown on (100) oriented Si by molecular beam epitaxy using BaF2-CaF2 as a buffer. Two-dimensional (2-D) growth of BaF2(100) is obtained using low-temperature thermal cycles during growth. CdTe growth is also 2-D above 270 °C substrate temperature and a 2×1 surface reconstruction indicating a Te-stabilized surface is obtained. The growth is 3-D at lower substrate temperatures. Good structural quality films showing sharp electron channeling patterns and pronounced photoluminescence at 77 K are obtained. The full width at half maximum of the band-edge peak is 12 meV at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103506
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3347-3349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CuIn3Se5 layers were grown on CuInSe2/Si(111) substrates by molecular beam epitaxy. Photoemission spectra of (112)-oriented CuIn3Se5 and CuInSe2 epitaxial layers were studied and the structures in the upper valence band are correlated with the Cu 3d and Se 4p density of states. The main valence band of CuInSe2 exhibits the three peak structure (consistent with theory) while a broadband with a shoulder is observed for the CuIn3Se5 phase. Electron channeling and x-ray diffraction confirmed the epitaxial growth of (112)-oriented layer. Surface and bulk composition analyses, position of valence band maxima, and a Se related vibrational mode at 153 cm−1 in Raman scattering measurements established the growth of the CuIn3Se5 phase. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112387
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  • 7
    Electronic Resource
    Electronic Resource
    Study of As-doping and surface reconstructions in molecular beam epitaxy grown CdTe(100) on BaF2-CaF2/Si(100) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 621-623 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial As doped p-type CdTe (100) layers have been grown for the first time on Si(100) by molecular beam epitaxy using stacked BaF2-CaF2 as a buffer. The doping activation is accomplished using an extra Cd source and laser illumination of the substrate during growth. The surface reconstructions have been studied during the CdTe growth under different conditions and the induced effects on Te desorption, Cd migration, and As substitution on Te vacancy site have been correlated. The resistivity of As doped CdTe layers is down to 20 Ω cm. The 8 K photoluminescence spectra of such a layer shows a dominant (A°,X) peak at 1.590 eV with full width at half maximum of 1.2 meV, and the As acceptor level corresponds to a shallow level with ≈60 meV activation energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106573
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  • 8
    Electronic Resource
    Electronic Resource
    High temperature interfacial studies in aluminium-stainless steel composites (1987)
    Springer
    Journal of materials science 22 (1987), S. 2680-2684 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Interfacial shear strengths in single wire aluminium-stainless steel composites have been measured by the pull-out test, both at room temperature and high temperatures, as a function of annealing temperatures up to 823 K and times up to 24 h. The post-exposure interfacial shear strengths measured at room temperature have been found to be inversely proportional to the square root of the interfacial compound layer thickness. A tentative mechanism to explain this relationship has been proposed in terms of matrix-compound layer debonding. The growth of the compound layer during high-temperature exposure is accompanied by an increase in its microhardness, presumably resulting from a concurrent precipitation of intermetallics. The interfacial shear strength has been found to be independent of stainless steel wire diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01086456
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  • 9
    Electronic Resource
    Electronic Resource
    Applicability of FMR for crystallization studies in metallic glasses (1990)
    Springer
    Journal of materials science 25 (1990), S. 1636-1639 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract It has been shown theoretically that the peak-to-peak ferromagnetic resonance (FMR) line-width (ΔH pp) should be proportional to the volume fraction (f) of the crystalline phase formed during annealing in ferromagnetic glasses. However, in the case of zero-magnetostrictive cobalt-based glasses (γ=0), ΔH pp should remain constant due to very low values of anisotropy. In Co68Fe4Mo1Si17B10 glass (γ=0), ΔH pp has been found to remain unaffected upon progressive crystallization. In Fe65Cr8B27 glass, ΔH pp has been found to be linearly proportional tof. Using this dependence, the activation energy of crystallization (E a) has been calculated. The value ofE a obtained from the FMR technique (248 kJ mol−1) agrees quite well with those from DTA studies using Kissinger's or Ozawa's technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01045363
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic properties of zeromagnetostrictive cobalt-based metallic glasses (1988)
    Springer
    Journal of materials science 7 (1988), S. 1142-1144 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00720859
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