ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The influence of electron-beam irradiation on defects in 4H-SiC diode structures wasinvestigated by cathodoluminescence (CL) microscopy and spectroscopy. In addition to threadingedge and screw dislocations, two types of stacking faults (SFs) were characterized by their emissionenergy, geometric shape, and the sensitivity of electron-beam irradiation. The SFs at λ = 425 nm(2.92 eV) expand from the surface of basal plane dislocation with line direction [11-20] and changetheir geometric shape by electron-beam irradiation. The SFs at λ = 471 nm (2.63 eV) are only slightlyinfluenced by electron-beam irradiation. The former corresponds to the Shockley-type SFspreviously observed in the degraded p-i-n diodes, and the latter to in-grown SFs with 8H structure.The panchromatic CL images constructed by the sum of monochromatic CL images suggest that thereare nonradiative recombination centers in the vicinity of Shockley-type SFs. The nucleation sites andthe driving force for SF expansion are discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.353.pdf
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