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  • 1
    Electronic Resource
    Electronic Resource
    On the phase transition of purple NH4–TCNQ (I) (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 1305-1306 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The x-ray diffraction measurement of purple NH4–TCNQ (I) crystal has been carefully carried out near the phase transition temperature (Tc =303 K). The anomalous part of the temperature dependence of the lattice parameter is proportional to the superlattice intensity below Tc. The diffuse scattering can be detected just above Tc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449446
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth and giant magnetoresistance of Co/Cu (111) superlattices on Cr buffer layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3899-3901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Co/Cu superlattices have been prepared by molecular-beam epitaxy on Si(001) substrates with a Cr buffer layer. X-ray-diffraction experiments showed that highly (111)-oriented superlattices were obtained. The magnetoresistance was investigated as a function of Cu spacer thickness tCu from 20 to 45 A(ring). The giant magnetoresistance (GMR) is oscillatory and the period of oscillation is about 8–9 A(ring). The maximum GMR was found as high as 10% with 300 Oe low field at room temperature. In addition, the resistance versus field curves were found to be clearly hysteretic, and the fields corresponding to the maximum resistence Rmax are oscillatory with Cu layer increasing, as long as the saturated field has oscillatory changes with tCu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357396
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  • 3
    Electronic Resource
    Electronic Resource
    Single crystals of Nb-Ta superlattice grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3523-3526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of Nb-Ta superlattice have been grown by molecular-beam epitaxy. The epitaxial relations between the samples and several kinds of sapphire substrates have been determined using x-ray diffraction. The interface region between Nb and Ta layers is estimated to be about 6 A(ring). A terraced structure of the superlattice is discussed. Reflection high-energy electron diffraction patterns of Nb and Ta surfaces observed in situ show half-order streaks and an elongation of lattice constant in the growth direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337605
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  • 4
    Electronic Resource
    Electronic Resource
    Single crystals of Al-Mn superlattice grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 319-323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of an Al-Mn superlattice have been grown by molecular-beam epitaxy. For thicknesses less than the critical thickness dc (approximately-equal-to)30 A(ring), Mn atoms form the fcc lattice in the [111] direction of an Al surface grown on sapphire-C substrate. The modulated structure of the Mn surface has been observed in situ by reflection high-energy electron diffraction. On the other hand, for thicknesses more than dc, Mn grows in the [110] direction of the bcc lattice (α phase). After annealing a compression of the lattice has been observed by x-ray diffraction. The annealing has produced well-oriented alloys with fairly large domain sizes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340296
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  • 5
    Electronic Resource
    Electronic Resource
    High-temperature growth of epitaxial NiAl thin films on AlAs by molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2196-2200 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Good NiAl single-crystal films were successfully grown on AlAs at high temperature (600 °C) by means of molecular-beam epitaxy. It was found that there existed three characteristic temperature regions in the crystal growth. Below 300 °C, the in situ formation of NiAl failed. Above 300 °C, NiAl was formed in situ, while other Ni-Al intermetallic compounds (Ni3Al2, NiAl3, Ni3Al) also appeared. Above 400 °C, remarkable improvements of the crystallinity, epitaxy, and monocrystallinity were found. The best NiAl film was obtained at 600 °C, where no interfacial disorder attributed to the interdiffusion and no film discontinuity due to balling up were observed. It is suggested that high-temperature growth is powerful for synthesis of high-quality NiAl-(Al,Ga)As heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348749
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  • 6
    Electronic Resource
    Electronic Resource
    Structural characterization of BaTiO3 thin films grown by molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2458-2461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ultrathin films of BaTiO3 were prepared using molecular beam epitaxy. For the substrate, (001)-oriented SrTiO3 single crystals were used. Controlling the growth conditions of these films as well as the semiconductor thin films, led to the successful growth of the BaTiO3 films as single crystals, characterized by x-ray diffraction even in the ultrathin range. The ultrathin BaTiO3 films are highly c-axis-oriented tetragonal phaselike bulk BaTiO3 crystals. The tetragonality of the thin film crystals is much larger than bulk crystal's. We also measured the saturated polarization (Ps) of the BaTiO3 films at temperatures ranging from room temperature to 600 °C. The results confirmed again that the films are ferroelectric tetragonal phase crystals. Moreover, they showed that the transition temperature for the ferroelectric-paraelectric phase transition of the films is higher than bulk crystal's. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367006
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  • 7
    Electronic Resource
    Electronic Resource
    Polarized XAFS study of high-temperature phases of NaNbO3 (2001)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 833-835 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Temperature dependence of the Nb displacement relative to the center of oxygen octahedron in NaNbO3 has been studied by polarized Nb K XAFS. Spectra were measured at two orientations of a single crystalline sample. Room temperature EXAFS data are in a good agreement with earlier X-ray diffraction data: Nb antiferroelectric displacements were found to be orthogonal to the b axis. Analysis of the temperature dependent EXAFS data didn't reveal any abrupt changes of Nb-O distances in the phase transition points. In all high-temperature paraelectric phases Nb appeared to be displaced to the off-center positions. Displacements, orthogonal to b axis, remained almost constant, while displacement along b axis gradually increased with temperature, so that in the cubic phase the displacements along all axes became equal. This shows, that disorder plays an important role in the high temperature phases. The above results are supported also by the analysis of the pre-edge structure, - the integral intensity of the pre-edge peak was temperature-independent when the polarization vector of the X-rays was orthogonal to b axis and gradually increased with temperature when the polarization was parallel to b.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049500018069
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  • 8
    Electronic Resource
    Electronic Resource
    EXAFS study of phase transitions in KIO3 (2001)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 803-805 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The iodine K-edge EXAFS study of KIO3$ was performed to clarify local structural changes on the successive phase transitions. The pair-distribution function of three oxygen atoms in an oxygen octahedron is almost independent on temperature like a covalent bond, whereas that of the other three is gradually reduced with increasing temperature like an ionic bond. The result indicates that iodine and oxygen atoms exist as an IO3− molecule in a pseudo-perovskite-type structure. The anomalous behavior in the Debye-Waller factor for the latter pair-distribution function appears around 50 K, which is associated with the orientational glass transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S090904950001832X
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  • 9
    Electronic Resource
    Electronic Resource
    Deglitching procedure for XAFS (2001)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 302-304 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A computer program for eliminating artifacts such as glitches and Bragg peaks of the polarized XAFS spectra is presented. It permits to easily locate and to eliminate from the EXAFS spectra the additional signals originated from the Bragg scattering by crystalline samples. The test of the procedure on the spectra with specially introduced artifacts and on the experimental polarized XAFS spectra showed its high effectiveness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049500020951
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  • 10
    Electronic Resource
    Electronic Resource
    EXAFS study of glass transition in K1–x(NH4)xI (2001)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 806-808 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The iodine K-edge EXAFS study of K1−x(NH4)xI mixed crystals was performed to clarify the local structure of the dipole glass associated with the random reorientational freezing of ammonium ions. The pair-distribution function of the nearest iodine-iodine ions is strongly reduced with increasing ammonium concentration. The reduction originates in the local distortion of lattice induced by the short-range antiferroelectric order of ammonium ions. We discuss the relationship between the reorientational freezing of ammonium ions and the local distortion of lattice in comparison with the results of X-ray diffraction measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049500018331
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