ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have fabricated a resonant tunneling transistor by epitaxial overgrowth over a tungsten grating placed 30 nm above a GaAs/GaInP semiconductor, double barrier, resonant tunneling heterostructure. The Schottky depletion around the buried metal contacts controls the current to a vertical transistor channel. The lateral extension of this channel is defined by a square opening in the grating with a side length of 1.4 μm, which corresponds to a sub-μm electrical width. The transport properties at 20 K show a fine structure in the resonant tunneling characteristics, and it is affected by the gate bias. These effects are discussed in terms of lateral quantum confinement in the transistor channel defined. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123008
Permalink