ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Quantum dots of Ga1−xInxP on GaP (001) have been grown by low-pressure metalorganic vapor phase epitaxy at 650 °C with varying (Ga,In)P coverages. The quantum dots were extensively characterized by transmission electron microscopy (TEM), atomic force microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent photoluminescence spectroscopy (PL). With increasing coverage the dots develop first as flat, extended hills with more or less pronounced {113} facets. Subsequently, on top of these hills, smaller, well-faceted, In-rich dots are formed. The PL intensity emitted from these dots is first constant and then increases with increasing temperature towards a maximum at about 200 K before it decreases. We present a model which explains the experiments, assuming In-rich dots surrounded by Ga-rich barriers. No evidence of alloy ordering was found in the TEM measurements. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1325386
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