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  • 1
    Electronic Resource
    Electronic Resource
    Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122609
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  • 2
    Electronic Resource
    Electronic Resource
    Design and simulation of low-threshold antimonide intersubband lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 711-713 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically and electrically pumped infrared lasers based on intersubband transitions in InAs/GaSb/AlAsSb quantum wells are modeled in detail. The large conduction-band offset of the AlAsSb barriers with respect to the InAs wells allows the lasing wavelength to be shortened to at least 1.9 μm. Furthermore, the small InAs electron mass results in longer phonon-limited lifetimes in the upper lasing subband as well as larger dipole matrix elements. This leads to the prediction of lower threshold currents, and hence, higher cw operating temperatures than for quantum cascade lasers based on the InGaAs/InAlAs/InP system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121976
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  • 3
    Electronic Resource
    Electronic Resource
    High-speed spin-polarized intersubband lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4734-4739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-polarized intersubband lasers based on optically pumped type-II antimonide quantum wells in a magnetic field are proposed. Complete discretization of the electron energy spectrum is predicted to extend the electron lifetime considerably. Continuous-wave room-temperature operation is projected for both interband and intersubband pumping configurations lasing at λ=16–24 μm. Furthermore, the parasitic capacitances associated with electrical injection are eliminated, and the large differential gain and fast intrinsic time scale should give modulation bandwidths in excess of 100 GHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371437
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  • 4
    Electronic Resource
    Electronic Resource
    Improved quantitative mobility spectrum analysis for Hall characterization (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4966-4973 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an improved quantitative mobility spectrum analysis (i-QMSA) procedure for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity measurements on bulk or layered semiconductor samples. The i-QMSA technique is based on a fundamentally new approach, which optimizes the fit to the conductivity tensor components and their slopes by making those adjustments in the mobility spectra that result in the greatest error reduction. Empirical procedures for manipulating the mobility spectra are also introduced, with the dual purpose of reducing the error of the fit and simplifying the shape of the spectra to minimize the presence of unphysical artifacts. A fully automated computer implementation of the improved QMSA is applied to representative synthetic and real data sets involving various semiconductor material systems. These results show that, as compared with previous approaches, the presented algorithm maximizes the information that may be extracted from a given data set, and is suitable for use as a standard tool in the characterization of semiconductor material and device transport properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368741
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  • 5
    Electronic Resource
    Electronic Resource
    Far-field characteristics of mid-infrared angled-grating distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6997-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-field emission characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are calculated using a self-consistent beam-propagation formalism that is more general than previous analyses. The theoretical projections are compared with the results of an experimental study of optically pumped α-DFB devices. Near-diffraction-limited beam quality is obtained both theoretically and experimentally for pump stripes ≤50 μm wide. While simulations employing the theoretical linewidth enhancement factor of 1.7 for the homogeneously-broadened W-laser gain spectrum predict that the good beam quality should be retained for stripes as wide as (approximate)200 μm, the data indicate a much more rapid degradation. That finding can be reproduced only by assuming that inhomogeneous broadening increases the structure's linewidth enhancement factor to (approximate)5. The experiments and theory also yield a steering of the output beam to off-normal angles as large as 6° when temperature tuning shifts the gain peak away from the grating resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326858
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  • 6
    Electronic Resource
    Electronic Resource
    Band parameters for III–V compound semiconductors and their alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368156
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  • 7
    Electronic Resource
    Electronic Resource
    Type-II quantum-well "W" lasers emitting at λ=5.4–7.3 μm (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4729-4733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of optically pumped type-II quantum-well "W" lasers with wavelengths ranging from 5.4 to 7.3 μm operated at temperatures up to at least 220 K for pulsed operation. The peak output power at 80 K was 1.1 W/facet for a device emitting at λ=7.0 μm. Internal losses were characterized for the temperature range between 40 and 190 K. Auger coefficients determined from an analysis of the threshold pump intensities were found to be suppressed by up to an order of magnitude compared to type-I III–V semiconductors with the same energy gaps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371436
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  • 8
    Electronic Resource
    Electronic Resource
    Optimum growth parameters for type-II infrared lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1796-1799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-infrared lasers grown by molecular beam epitaxy have been systematically studied, respectively, by Nomarski differential interference contrast, high-resolution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 °C, based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 μm laser, grown with the optimal growth parameters, exhibits a maximum cw operating temperature of 210 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370971
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  • 9
    Electronic Resource
    Electronic Resource
    Mid-infrared photonic-crystal distributed-feedback laser with enhanced spectral purity and beam quality (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3221-3223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a photonic-crystal distributed-feedback (PCDFB) laser with an antimonide type-II "W" active region. Optical lithography and dry etching were used to pattern the two-dimensional rectangular lattice with a second-order grating tilted by 20° relative to the facet normal. For pulsed optical pumping, the emission line centered on λ=4.6–4.7 μm is considerably narrower (7–10 nm) than for Fabry-Pérot and angled-grating DFB (α-DFB) lasers fabricated from the same wafer. The PCDFB beam quality is also substantially enhanced, e.g., by a factor of 5 compared with the α-DFB at a pump-stripe width of 200 μm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418445
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  • 10
    Electronic Resource
    Electronic Resource
    High-efficiency midinfrared "W" laser with optical pumping injection cavity (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2876-2878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an optical pumping injection cavity (OPIC) edge-emitting laser which employs GaSb/AlAsSb distributed Bragg reflectors above and below the type-II "W" active region to form an etalon for the pump beam. A pulsed W–OPIC laser emitting at 3.1–3.4 μm displays an incident threshold pump intensity of only 8 kW/cm2 at 300 K, and incident power conversion efficiencies per facet of 9% at 77 K and 4% at 275 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125176
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