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  • 1
    Electronic Resource
    Electronic Resource
    The DO high voltage system
    Amsterdam : Elsevier
    Nuclear Physics B (Proceedings Supplements) 23 (1991), S. 402-408 
    Details
    ISSN: 0920-5632
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0920-5632(91)90076-Q
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  • 2
    Electronic Resource
    Electronic Resource
    Interface properties of HgCdTe metal-insulator-semiconductor capacitors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 265-267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductance method has been used to measure the density of interface states of the ZnS/Hg0.775Cd0.225Te metal-insulator-semiconductor (MIS) system with three different HgCdTe surface treatments. It is found that the density of fast interface states increases from ∼1011 eV−1 cm−2 at the conduction-band minimum to ∼1013 eV−1 cm−2 near the valence-band maximum. In addition, the interface states located in the lower part of the band gap communicate with the valence band so efficiently that the effective band gap is reduced. Our observations explain why the p-type MIS photodiode is superior to the n-type version in terms of breakdown voltage and storage time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100985
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  • 3
    Electronic Resource
    Electronic Resource
    Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122609
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  • 4
    Electronic Resource
    Electronic Resource
    Infrared dielectric constant of cubic SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7255-7258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real dielectric constant for chemical vapor deposition 3C-SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K ε 0=9.52 and ε ∞=6.38; at 5 K ε0=9.28 and ε ∞=6.22. In all cases the estimated error is ±0.8%. The observed ratio ε0 /ε∞ agrees with the Lyddane–Sachs–Teller relation to 0.1% at 300 K and 0.2% at 5 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360438
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon δ-doped InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351850
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  • 6
    Electronic Resource
    Electronic Resource
    Quantum mechanical correction on capacitance-voltage characteristics of narrow gap semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2208-2210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that for narrow band-gap semiconductors, the doping concentration deduced from capacitance-voltage measurements can be substantially underestimated due to surface quantization effect. While our derivation can be applied to all materials, detailed accounts on p-type Hg0.788Cd0.212Te are given as an example. We found that for a practical doping range, 1×1015 cm−3 to 1×1017 cm−3, the doping level can be underestimated by 53% to 173%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349460
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  • 7
    Electronic Resource
    Electronic Resource
    Tight-binding calculations of energy gaps in (001)-(InAs)n(InSb)m strained superlattices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tight-binding calculations of electronic structures for (001)-(InAs)n(InSb)m strained layer superlattices are presented. The dependences of the superlattice band gap on the band offsets between InAs and InSb are examined for three different types of biaxial strains. It is found that the band gap depends strongly on the band offset, and that for m=1 the ordering lowers the band gap with respect to the random alloy. A comparison with the photoluminescence data for the energy gaps of (n×1) strained-layer superlattices is discussed. In addition, the electronic structures of strained InAs quantum wells are calculated, and interpretations are provided for the observed type-I to type-II band alignment transition at n=5 in a quantum well formed by (n×1) strained layer superlattices and AlSb barriers. Changes of energy gaps with layer thicknesses in strained layer superlattices with n=m and n=8−m are also studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373072
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  • 8
    Electronic Resource
    Electronic Resource
    Transport properties of Be- and Si-doped AlSb (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7876-7879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick epitaxial layers of AlSb(Si) and AlSb(Be) were grown by molecular beam epitaxy and characterized by variable-temperature Hall/van der Pauw measurements. Si is shown to be predominantly an acceptor in AlSb, with an energy level 33±4 meV above the top of the valence band. Be is also an acceptor, with an energy level 38±4 meV above the top of the valence band. Be is a robust doping source for p-AlSb for carrier densities ranging from 1015 to 1019 cm−3. Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSb(Be) layers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373470
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8192-8194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence has been used to study the band-gap energy of InAs1−xSbx digital superlattices and band alignment of InAs1−xSbx/AlSb quantum wells at 5 K. It is found that the InAs1−xSbx digital alloys have a smaller effective band gap than InAs1−xSbx random alloys. In addition, the valence band offset between type-II InAs/AlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1−xSbx is increased, and the alignment between InAs1−xSbx/AlSb becomes type I when x〉0.15. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373517
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6632-6635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission spectra of GaSb have been obtained over a temperature range from 10 to 470 °C. Using this information, transmission thermometry is applied to obtain accurate measurements of sample temperature during molecular beam epitaxy growth on GaSb substrates. A GaSb surface reconstruction transition is determined as a function of Sb flux and substrate temperature, establishing a laboratory-independent temperature standard. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370290
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