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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 40 (1984), S. 168-168 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 214 (1967), S. 1107-1108 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Polyethylene is a suitable substance in which to search for prolonged lifetimes of crystals, because not only is it a much studied material whose radiation chemistry is comparatively well understood, but also there appears a priori to be a reasonable chance of success. For example, alkyl free ...
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6461-6471 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural evolution during the initial stages of islanding of Ge on vicinal Si(100) has been studied in situ with nanometer resolution in an ultrahigh-vacuum scanning transmission electron microscope. Ge is deposited using molecular-beam-epitaxy (MBE) techniques on vicinal Si(100) misoriented 1° and 5° toward 〈110〉. For MBE-type experiments, there is evidence for metastable growth of the Ge intermediate layer to much greater than the equilibrium critical thickness. The layer may grow up to seven monolayers thick before islanding in the Stranski–Krastanov growth mode. The presence of strong adatom sinks significantly alters the growth and size distribution of the islands when the spacing of these sinks is less than an adatom diffusion distance. Studies of the initial stages of islanding in solid-phase MBE indicate that there is no long-range adatom diffusion. There is an initial fast transformation from a disordered layer growth, followed by a sluggish growth of islands. We have studied the coarsening of these islands at the earliest stages with sensitivity to islands as small as 2 nm in radius. It appears that there is a novel coarsening mechanism influenced by an unstable intermediate layer and dislocation-free islands. In all cases, the dislocation-free islands grow more slowly than those which have relaxed by the introduction of misfit dislocations.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1161-1170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe, Co, and Ag particles grown on various CaF2 substrates have been studied using ultrahigh vacuum scanning electron microscopy with nanometer resolution. Fe and Co show a very high nucleation density which is remarkably independent of deposition temperature in the range 20〈T〈300 °C, on both bulk CaF2(111), and on thin CaF2(111) films grown on Si(111). This feature is characteristic of nucleation at defect sites with a high trapping energy. An atomistic nucleation model has been extended to cover this case. The comparison with experiment requires adsorption, pair binding, and defect trapping energies all to be around 1 eV. The trapping sites occupy 1% of the surface, and are thought to be chemical (F-vacancy, oxide, or hydroxide) in nature. In contrast, the growth of Ag on the same substrates shows a more usual nucleation and growth pattern, though the growth of Ag on Fe islands shows interesting features which are discussed. A self-similar coalescence model is tested using the data obtained. The agreement is excellent for Ag, while Co and Fe show the expected deviations due to limited surface diffusion around the islands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1890-1892 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High spatial resolution Auger electron spectra and images have been obtained by optimizing secondary electron collection efficiency in a scanning transmission electron microscope (STEM). We describe an ultrahigh vacuum, 100 keV STEM which is capable of collecting Auger electron spectra and images with edge resolutions of ≤5 nm. Typical spectra and images from the Ge/Si(100) and Ag/Si(100) film growth systems are presented and discussed. These images demonstrate high-resolution elemental mapping which can be used in the study of surface processes on the nanometer scale.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 276-278 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germanium surface segregation in Si/Ge/Si(100) heteroepitaxial structures has been studied by quantitative Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED). Ge segregation was measured for 1–4 ML Ge, for slow Si growth rates (3×10−4 nm/s) at moderate deposition temperature (520 °C). A layer growth model is used to infer segregation probabilities between 90% and 98%, increasing with Ge layer thickness, especially between 1 and 2 ML. Using this model, the Ge profile in the cap layer is calculated. Surface roughness is just noticeable at 4 ML, and is incorporated into the model in an illustrative manner. A two-state model is used to determine the segregation energy, 0.24±0.02 eV, for 2–3 ML. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 30 (1974), S. 929-935 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 38 (1982), S. 1896-1900 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Catalysis letters 15 (1992), S. 133-143 
    ISSN: 1572-879X
    Keywords: Auger electron imaging ; Auger electron spectroscopy ; small particles ; supported catalysts
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract High spatial resolution Auger electron spectra and images of supported metal particles have been obtained in a UHV scanning transmission electron microscope. An edge resolution 〈 3 nm has been achieved. The number of atoms in a small particle can be estimated from the integrated intensity of the Auger electrons. This method is very useful for detecting and measuring particles with sizes smaller than the incident probe size. Ag clusters containing less than 20 atoms have been detected when supported on a thin carbon film.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 13 (1988), S. 193-201 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: New calculations of electron impact ionization cross-sections and back-scattering correction factors have been undertaken for comparison with experiment. The ionization cross-sections were obtained from ab initio Hartree-Fock-Slater calculations and the back-scattering correction factors from the solution of the Boltzmann transport equation. The cross-sections and correction factors have been calculated for the elements silicon, copper, silver and tungsten over the energy range 0.3-30 kV and the incident angle range 0-90°. These calculations are compared with previous calculations available in the literature.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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