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  • 1
    Electronic Resource
    Electronic Resource
    Exciton-photon coupling in GaAs bulk microcavities (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1747-1751 
    Details
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions) ; Excitons and related phenomena (including electron-hole drops) ; Quantum optics ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A great interest in the study of exciton-photon coupling in resonant optical media such as semiconductor microcavities is currently developing both in experiments and in theory. We investigate the spectral response of a new semiconductor quantum system in which the cavity material itself is the active medium. If the Fabry-Perot quasi-mode is carefully tuned on the excitonic transition of the cavity bulk material, strong exciton-photon coupling takes place and produces new features such as a Rabi-like splitting as large as that observed in quantum well microcavities and comparable optical absorption. In addition, the polaritonic spatial dispersion and the quantization of the centre-of-mass motion introduce remarkable fine structures which are absent in the quantum well case. We demonstrate the above effects from a spectroscopic analysis of GaAs cavities, using standard reflectance and photoluminescence techniques. The experimental results are further clarified with theoretical calculations performed with an adapted transfer-matrix approach. The case of semi-cavities is finally considered and a new way to control the exciton-photon interaction in our system is achieved tailoring the photonic wave function with a change in the reflectivity phase of the mirrors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457274
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  • 2
    Electronic Resource
    Electronic Resource
    Multipolaritons in semiconductor thin layers: Interference effects in the reflectance spectra (1993)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 15 (1993), S. 337-345 
    Details
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Polaritons (including photon-phonon and photon-magnon interactions) ; Optical properties of bulk materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We consider the case of a plurality of polariton modes due to the valence band structure, and give a one-dimensional model to compute the optical functions in the exciton frequency range. Interference effects of each mode with itself and with the other modes are identified by a fine structure in the reflectivity spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02456916
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  • 3
    Electronic Resource
    Electronic Resource
    Heavy- and light-hole excitons in anisotropic semiconductors (1992)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 14 (1992), S. 1283-1286 
    Details
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We show how to compute the eigenvalues of an anisotropic Schroedinger equation for light-and heavy-hole excitons using a simplified deltalike interaction potential. Performing the calculation with a potential appropriate to bulk GaAs crystal, we obtain the excitonic binding energies for the heavy- and light-hole excitons, with the heavy-hole binding energy greater than that for the light hole. Inversion of this order for the case of a quantum well is discussed and expalined
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02456785
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  • 4
    Electronic Resource
    Electronic Resource
    Boundary problems for polariton propagation in thin layers and quantum wells (1992)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 14 (1992), S. 1203-1215 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties of thin films, surfaces, and thin-layer structures (including superlattices, heterostructures, and interacalation compounds) ; Excitons and related phenomena (including electron-hole drops) ; Polaritons (including photon-photon and photon-magnon interactions)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We show how to compute the optical functions (reflection and transmission) of a semiconductor thin slab, in the vicinity of nearly degenerate exciton states. Additional boundary conditions are not required in the coherentwave-function approach and multiple-polariton effects are included since Maxwell equations are satisfied. When the slab thickness is comparable to the exciton Bohr radius, centre of mass quantization results. When the slab thickness is smaller than the Bohr radius, we obtain, quantum well polaritons. Numerical examples appropriate to GaAs are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02456779
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  • 5
    Electronic Resource
    Electronic Resource
    Excitonic polaritons in superlattices (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1417-1422 
    Details
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions) ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The excitonic energies are computed in superlattices from the poles in the imaginary part of the susceptibility, using an appropriate Green's function expression for the coherent amplitude function of the electron-hole pair. Solving the Maxwell equations, the polariton states are obtained and the optical properties are computed. The procedure includes the effects of coherence between the carriers and the electromagnetic field, and it does not require any type of additional boundary conditions. Detailed calculations in GaAs/Ga1−x Al x As superlattices show polaritonic effects in the optical properties, in particular a peculiar fine-structure lineshape of then=1 andn=2 hh and lh excitons is obtained. A comparison with similar calculations in bulk GaAs clearly shows the roles of quantum confinement and of anisotropy in the superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457220
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  • 6
    Electronic Resource
    Electronic Resource
    Porous-silicon microcavities (1996)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1213-1223 
    Details
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Other solid inorganic materials ; Electron states in low-dimensional structures (superlattices, quantum well-structures and multilayers) ; Quantum optics ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The properties and preliminar applications of porous-silicon (p-Si) microcavities are here reported. These structures are based on a planar resonator formed by two narrow-band high-reflectance distributed Bragg reflectors separated by a thin active optical layer, all of which are made of p-Si layers. The accurate control of the electrochemical dissolution of Si lets us realize p-Si multilayers with the desired refractive indices sequence. Large improvements of the emission properties of p-Si microcavities with respect to standard p-Si samples are observed: 1) increased emission intensity, 2) spectral narrowing of the emission band, and 3) high directionality in the emission pattern. Resonant-cavity light-emitting diodes with higher efficiencies and stabilities with respect to standard p-Si/metal devices are demonstrated. Reflectivity changes due to absorption saturation have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464699
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  • 7
    Electronic Resource
    Electronic Resource
    Modification of excitonic emission in a GaAs bulk microcavity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2388-2390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of cavity-induced modifications of the three-dimensional bulk exciton emission in a planar GaAs microcavity, in which the entire cavity layer is an active material. We have performed standard photoluminescence measurements at various emission angles, obtaining evidence of coupling between the exciton and the cavity mode. The modified density of photon states available for the exciton decay shows up in the angle dependence of the emission lineshape, as well as of the photoluminescence peak intensity. The experimental results are qualitatively clarified with theoretical calculations performed with an adapted transfer-matrix approach. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113949
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  • 8
    Electronic Resource
    Electronic Resource
    Polaritons in anisotropic semiconductors (1995)
    Springer
    The European physical journal 98 (1995), S. 39-47 
    Details
    ISSN: 1434-6036
    Keywords: 78.66.-w ; 71.35.+z ; 71.36.+c
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We show how to compute the optical properties (reflection and absorption) of anisotropic semiconductors in the exciton energy region, taking into account polariton and electron-hole coherence effects. The method is applied to a GaAs/Ga1−x Al x As superlattice, and the modifications in the optical properties with respect to GaAs are related to the anisotropy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01318277
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  • 9
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    Modification of excitonic emission in a GaAs bulk microcavity (1995)
    American Institute of Physics
    Details
    Publication Date: 1995-05-01
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides (2015)
    American Institute of Physics
    Details
    Publication Date: 2015-09-07
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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