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  • 1
    Electronic Resource
    Electronic Resource
    Nitrophenols from Northeast Pacific bryozoans
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 84 (1986), S. 43-45 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(86)90268-3
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2214-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of regrown interfaces deposited using an alternate metalorganic chemistry, diethylgallium chloride (DEGaCl), are investigated. With the appropriate HCl pre-regrowth surface treatment, these interfaces are found to be of very high quality with no substantial interface charge. The contact resistivity, as determined by transmission line measurements, is (2–4)×10−7 Ω cm2 at both 77 and 300 K. Secondary-ion mass spectroscopy measurements show no detectable accumulation of impurities at the regrown interface, in contrast to those regrown using the conventional trimethylgallium-based chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102064
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  • 3
    Electronic Resource
    Electronic Resource
    Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 910-912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective epitaxy of GaAs was demonstrated in the metalorganic vapor phase epitaxy of GaAs utilizing diethylgallium chloride [Ga(C2H5)2Cl] and AsH3. No GaAs will deposit on SiO2, Si3N4, or SiONx under normal growth conditions, i.e., 600–800 °C at 0.1 atm reactor pressure. Unlike other forms of selective epitaxy, there is no enhanced growth rate at the edge of the selectively grown regions. The selectivity is a result of the reduced adsorption of the growth precursor, probably GaCl, on the masking material relative to the exposed GaAs areas. Similar selectivity should be possible for Al and In containing semiconductors using an analogous growth chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100805
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  • 4
    Electronic Resource
    Electronic Resource
    Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels ((approximately-greater-than)1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100008
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of the Ga-As-In-As superalloy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1830-1832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga-As-In-As superalloy has been grown by atomic epitaxy on InP substrates. This has been achieved by sequential exposure of the substrate to trimethylgallium, arsine, triethylindium, and arsine. The thickness of the deposited film is in excellent agreement with the predicted value based on the number of exposure cycles. These results demonstrate that atomic layer epitaxy offers the ultimate control for depositing thin films. The superalloy films have been characterized by transmission electron microscopy and photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98484
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  • 6
    Electronic Resource
    Electronic Resource
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348579
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of indium on the properties of DX centers in Si-doped Iny(Ga0.3Al0.7)1−yAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1674-1681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of In to Si-doped Al0.3Ga0.7As has been investigated to determine its effect on DX centers. As expected, the persistent photoconductivity of the material is reduced as the band gap decreases with increasing In concentration. In addition, a new deep level transient spectroscopy peak is observed for the first time, which we attribute to DX centers having near In neighbors. This is clear evidence that the DX levels are highly localized states associated with donor impurities, whose properties are very sensitive to the local atomic configuration near the donor atom. This work supports previously published work on the effects of alloy disorder on DX centers, which is the strongest evidence to date for the microscopic configuration of the DX level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346651
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  • 8
    Electronic Resource
    Electronic Resource
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346990
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4928-4935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport measurements are very sensitive to the structure of a heterojunction. This sensitivity is used in conjunction with a realistic model for the band diagram to determine the position of the dopant junction relative to the metallurgical junction. This electrical technique involves the determination of an effective barrier height from temperature-dependent I-V measurements and comparison with calculated barrier heights. The sensitivity of the electrical characteristics to the device structure can often be greater than that of secondary ion mass spectroscopy or C-V profiling. GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown under a variety of conditions are used to demonstrate this technique. Growth conditions which produce abrupt zinc profiles are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343209
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  • 10
    Electronic Resource
    Electronic Resource
    Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4975-4986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed deep level transient spectroscopic study in p-type Mg- and Zn-doped GaAs epitaxial layers grown by metal-organic vapor phase epitaxy. Dependence of deep level structures on doping concentrations and growth temperatures has been investigated. Over a wide range of growth conditions, four hole traps and an electron trap ranging in activation energy from 0.18–0.79 eV were measured in GaAs:Mg while only a single hole trap has been observed in GaAs:Zn.The presence of a certain trap and its concentration in GaAs:Mg depends mainly on the doping concentration in the layers. The total trap concentration in the GaAs:Mg decreases rapidly with doping concentration for p〉4×1017 cm−3. The physical and chemical origins of several of these traps have been identified. The Mg-doped GaAs always exhibited a greater concentration of midgap trap levels than the Zn-doped material, regardless of dopant concentration or growth temperature. The overall defect structure and dopant incorporation characteristics indicate that Zn is the preferred dopant species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342447
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