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  • 1
    Electronic Resource
    Electronic Resource
    Investigations on the radially free full circle arc (1981)
    Springer
    Applied physics 25 (1981), S. 317-328 
    Details
    ISSN: 1432-0630
    Keywords: 52.30 ; 52.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An argon arc, burning between two horizontal, plane-parallel, insulating plates, is bent circularily by an external and its own magnetic field. Except for the small electrode zone, one gets a stationary radially free full circle arc for experimental investigations of magnetohydrodynamic and thermodynamic effects under well defined conditions. The local temperature distributions in the arc cross-section are detected spectroscopically as functions of the arc current and the arc radius or curvature, respectively. By means of the basic equations of conservation of energy, mass, and charge and the known transport properties of argon at atmospheric pressure, the mass flow field in the arc is evaluated. In the arc core it follows the direction of the Lorentz force radially outward counter-balancing the tendency of the curved arc to move inwards thermodynamically. Due to the symmetry to the centre-plane of the arc chamber and the vanishing net flow for the whole system, the gas flow has to stream back in the cold outer arc zones, thereby forming a double whirl. By reasons of the experimental arrangement even a quadruple whirl occurs. Additionally the evaluation yields the specific radiationu(T) of argon being compared with results in the recent literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902990
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of heavy boron doping upon oxygen precipitation in Czochralski silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4454-4465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this investigation, diffuse x-ray scattering, Bragg line profile, and transmission electron microscopy have been employed for the study of point defects and their interaction with oxygen impurities in heavily boron-doped Czochralski Si wafers during various thermal treatments between 450 and 1050 °C for time intervals from 2 to 128 h. Bragg line profile data show that (1) materials tend to become more perfect during the initial stages of thermal annealing regardless of anneal temperatures and (2) the integral width and full width at half-maximum both exhibit minima after a thermal treatment at 450 °C for 32 h while the opposite behavior is observed for a thermal treatment at 1050 °C. The diffuse x-ray scattering data have shown that (1) the nature of the predominant defects depends upon annealing temperature, time and ramping cycles; and (2) the mean cluster size ranges between 1.4 and 2.0×103 nm regardless of annealing temperature and time. Transmission electron microscopy results show (1) slower precipitation kinetics occur than in lightly doped materials, (2) virtually no precipitates have been observed, even after 128 h for annealing temperatures up to 650 °C, (3) amorphous precipitates with a {100} platelet morphology are observed after prolonged anneals at 800 °C, and (4) the appearance of complex precipitate structures have been observed at 1050 °C. These results indicate significantly different behavior from that of lightly doped silicon. Finally, using a thermodynamic and kinetic model, we attempt to explain these heavy boron doping effects on SiO2 precipitation in Czochralski Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341268
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  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear viscoelastic dilation of SiO2 films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 151-152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provides an estimate of the critical stress and low-stress viscosity of dry SiO2 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101440
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  • 4
    Electronic Resource
    Electronic Resource
    A model potential function for carbon systems: clusters (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 4480-4482 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100374a025
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  • 5
    Electronic Resource
    Electronic Resource
    A high spatial resolution optical pyrometer (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1024-1028 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical pyrometer has been developed which resolves 20 μm at a working distance of 24 in. and measures relative temperature differences of ±2 °C over the range 1000–2000 °C. The instrument is particularly suitable for measuring temperature or emissivity distributions in very small heated objects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141471
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  • 6
    Electronic Resource
    Electronic Resource
    Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4914-4919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of stress in silicon nitride films, deposited by the low-pressure chemical vapor deposition process, on the point defect concentrations in silicon has been studied. The stress level in the nitride film is varied by controlling the ratio of flow rates of reactant gases R=fSiH2Cl2/fNH3, from 1/6 to 6. The stress in the nitride film is tensile and its magnitude increases with decreasing R. During anneals at 1100 °C in Ar with a high stress in the nitride, phosphorus diffusion in silicon is retarded, antimony diffusion is enhanced, and extrinsic stacking faults shrink faster than with a low stress. These results suggest that a vacancy supersaturation and a self-interstitial undersaturation exist under the nitride and that the deviation from the equilibrium point defect concentrations are closely related to the stress level in the silicon nitride film. From the phosphorus junction profiles with varying shape width, an effective vacancy diffusivity of 3×10−10 cm2/s has been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342441
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of high carbon concentration upon oxygen precipitation and related phenomena in CzSi (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 849-855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of high carbon concentration upon oxygen precipitation and related phenomena in Czochralski (Cz) silicon have been investigated by combining various furnace and rapid thermal anneals. Our data show that oxide precipitate (OP) density, estimated from changes in interstitial oxygen concentration (ΔOi), increases with increasing substitutional carbon concentration, Cs, while thermal donor (TD) formation is inhibited at high Cs. Even though ΔOi increases monotonically with Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs∼4 ppma) exhibit Pendellösung fringes, indicating a strain-free bulk state. Our transmission electron microscope and optical microscopic data also show very few resolvable structural defects associated with precipitates inside the bulk Si. Using a thermodynamic and kinetic model, we attempt to explain: (1) reduced thermal donor formation, (2) lack of bulk stress notwithstanding high ΔOi, and (3) predominantly polyhedral precipitate morphologies in high carbon content CzSi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341936
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  • 8
    Electronic Resource
    Electronic Resource
    Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3255-3266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using thermodynamic and kinetic considerations, we explain the quasiequilibrium, morphological, and structural characteristics of thermally induced oxide precipitates in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon/silica interface is used to explain the experimentally observed precipitate shapes: 〈110〉 coesite rods, (100) vitreous silica discs, and silica polyhedra at low, intermediate, and high temperatures, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336908
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  • 9
    Electronic Resource
    Electronic Resource
    Importance of oxygen-oxygen interactions in silica structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1805-1811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo studies show that an exclusion principle, based upon a minimum allowed O-O separation in adjacent tetrahedra, drastically restricts the relative orientations such tetrahedra can assume. This ad hoc criterion, with no energy considerations involved, reproduces the experimentally observed Si-O-Si angle distribution determined from the structural data of a large number of silicas and silicates. Similar results are obtained when Coulombic or nonbonded energy calculations are used. When extended structures are formed, this steric requirement alone causes additional and severe restrictions on the relative orientations of adjacent tetrahedra. In fact, it is not possible to have completely random orientations of tetrahedra beyond the first neighborhood shell, unless some nonrandomness is introduced to help formation of closed rings. Thus, the completely random continuous network model fails to produce extended structures in vitreous silica and defect models must be introduced to patch up the model. These considerations also apply to GeO2 and SiS2 structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334407
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  • 10
    Electronic Resource
    Electronic Resource
    Rate constants for light-enhanced thermal oxidation of silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2086-2094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In response to a 1-W (56.6 W cm−2) laser beam stimulation at 5145 A, oxidation enhancement is found to occur and data are given for Si(111) and Si(100) from 900 to 750 °C. Using a heat transfer calculation, the thermal contribution and the nonthermal or optical contribution to the total enhancement have been separated. Analysis of the data in terms of linear and parabolic rate constants shows that the major effect resides in B rather than in B/A, with differences existing between the (111) and (100) orientations. A theoretical explanation is suggested to account for this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339526
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