ISSN:
0392-6737
Keywords:
Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
;
III-V semiconductors
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary Optical properties of GaAs/Al x Ga1−x As shallow quantum wells have been studied in the 2–200K range, both by c.w. and time-resolved experiments. The results agree with a variational calculation of the excitonic transitions. The LO-phonon-assisted carrier relaxation and a temperature-activated non-radiative channel are evidence.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02457232
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