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  • 1
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract We have encountered a paternity case where exclusion of the putative father was only observed in the ABO blood group (mother, B; child, A1; putative father, O), among the many polymorphic markers tested, including DNA fingerprints and microsatellite markers. Cloning a part of the ABO gene, PCR-amplified from the trio’s genomes, followed by sequencing the cloned fragments, showed that one allele of the child had a hybrid nature, comprising exon 6 of the B allele and exon 7 of the O1 allele. Based on the evidence that exon 7 is crucial for the sugar-nucleotide specificity of A1 and B transferases and that the O1 allele is only specified by the 261G deletion in exon 6 of the consensus sequence of the A1 allele, we concluded that the hybrid allele encodes a transferase with A1 specificity, resulting, presumably, from de novo recombination between the B and O1 alleles of the mother during meiosis. Screening of random populations demonstrated the occurrence of four other hybrid alleles. Sequencing of intron VI from the five hybrid alleles showed that the junctions of the hybrid alleles were located within intron VI, the intron VI-exon 7 boundaries, or exon 7. Recombinational events seem to be partly involved in the genesis of sequence diversities of the ABO gene.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6171-6174 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new cap annealing method using WSiN/SiO2 multilayer film for Si-implanted GaAs has been developed. The post-implant annealing was performed by varying the SiO2 thickness in Ar/H2 atmosphere without As overpressure. The annealed layers were characterized by Hall effect, capacitance-voltage, secondary ion mass spectrometry, and 77-K photoluminescence measurements. The WSiN/SiO2 capped annealing method was found to offer high-activation efficiency without the deep tailing of carrier concentration profiles. Enhanced activation efficiency with the increase in SiO2 thickness was also observed for this annealing method.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2044-2048 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated fundamental electrical and optical characteristics of GaAs implanted with SiFx and SFx (x=1, 2, and 3) molecular ions at energies which give the same dopant atom (Si or S) ion ranges. Three kinds of annealing methods were compared. Characterization of these implanted GaAs layers was carried out by the Hall effect, capacitance-voltage, secondary ion mass spectrometry, and 77-K photoluminescence measurements.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1102-1107 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new rapid thermal annealing (RTA) method that uses GaAs guard rings has been developed. A new temperature monitoring method is also described. Generations of slip lines on 2-in.-diam GaAs wafers annealed in different kinds of RTA arrangements were investigated by x-ray transmission topography. The use of three GaAs guard rings has been found to be very effective in reducing slip lines. The temperature dependence of activation and uniformity of annealing characteristics for a selective Si-implanted 2-in.-diam GaAs wafer at 100 keV with a dose of 5×1012 cm−2 were evaluated by drain saturation current (Idss) distribution of gateless field-effect transistors (FETs) over the wafer. The best uniformity, as well as the highest activation, was obtained by RTA at 920 °C for 15 s. The activation energy of 1.47 eV for the average value of Idss (∼(Idss)) was obtained. By using this RTA method, GaAs digital integrated circuits (ICs), dual-modulus prescalers, have been successfully fabricated with high yield for the first time. This RTA method is very promising for GaAs digital IC processing.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3970-3974 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of CF4/O2 plasma treatment before ion implantation on the activation efficiency for Si-implanted GaAs by rapid thermal annealing. WSiN-capped, SiO2-capped, and capless rapid thermal annealings at 900 °C for 10 s in an Ar atmosphere were compared. The annealed samples were characterized by Hall-effect, capacitance-voltage, secondary-ion mass spectrometry, and 77-K photoluminescence measurements. The large decrease in activation efficiency by CF4/O2 plasma treatment was observed in SiO2-capped rapid thermal annealing. On the other hand, the decrease in activation efficiency by this plasma treatment was small in both WSiN-capped and capless rapid thermal annealings.〈squeeze1.6p〉
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1503-1505 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated fundamental electrical characteristics of GaAs implanted with SiFx and SFx (x=1, 2, and 3) molecular ions at energies which give the same dopant atom (Si or S) ion ranges. Three kinds of annealing methods were compared. Characterization of these implanted GaAs layers was carried out by the Hall effect, capacitance-voltage, and secondary ion mass spectrometry measurements.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 503-504 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a new phenomenon in which the activation efficiency of a SiF3 -implanted GaAs layer is increased by the preimplant thermal treatment of the semi-insulating GaAs substrate with SiO2 encapsulant.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1384-1386 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied rapid thermal annealing (RTA) of Si-implanted GaAs using Ga-doped spin-on glass (SOG) film for the first time. Three kinds of films such as Ga-doped SOG, undoped SOG, and SiO2 formed by the chemical vapor deposition (CVD) method were compared. The annealed GaAs layers were characterized by sheet resistance, capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and photoluminescence (PL) measurements. The secondary ion mass spectroscopy (SIMS) measurement was also performed to investigate the atomic behavior at the insulating film/GaAs interface during annealing. Ga-doped SOG film as an anneal cap of GaAs offers activation efficiency as compared with CVD-SiO2 and undoped SOG film. The PL spectra for the annealed sample with Ga-doped SOG cap exhibited the lowest intensity at 1.36 eV broad band emission, which suggests the suppression of the generation of Ga-vacancy related acceptor level during annealing.
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  • 9
    ISSN: 1432-119X
    Keywords: JAK STAT Hassall's corpuscles Tyrosine phosphorylation Immunohistochemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. The janus kinases (JAK) and signal transducers and activators of transcription (STAT) pathway has been shown to play a key role in cytokine-mediated signal transduction, and to regulate growth, differentiation, and death of both normal and transformed cells. In the present study, we investigated immunohistochemically the distribution of the JAK-STAT pathway in the human thymus. Various elements of the pathway were abundantly expressed in Hassall's corpuscles, located in the thymus medulla and representing terminal stages of the thymic medullary epithelium. Furthermore, the elements of the pathway showed distinct localization in Hassall's corpuscles. JAK1, JAK2, and TYK2 were expressed in high amounts in the entirety of Hassall's corpuscles, whereas JAK3 was in the outer layer. STAT1, STAT2, and STAT6 were abundantly expressed in the entire Hassall's corpuscles, whereas STAT5 was in the outer layer. These findings strongly suggest that the JAK-STAT pathway may play a role in thymic medullary epithelial maturation.
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  • 10
    ISSN: 1432-119X
    Keywords: Calcineurin Thymus Hassall's corpuscles Epidermis Immunohistochemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. Calcineurin, a Ca2+/calmodulin-dependent protein phosphatase, plays an important role in various physiological functions including T cell activation. This enzyme is a target molecule for the immunosuppressants, cyclosporin A and FK506. In the present study, we investigated immunohistochemical localization of calcineurin and FKBP12, an FK506-binding protein, in human thymus and epidermis. The catalytic subunit (calcineurin A) of calcineurin was abundantly expressed in Hassall's corpuscles which were localized in the thymic medulla and represented the terminal stages of thymic medullary epithelium. The regulatory subunit (calcineurin B) of calcineurin was also expressed in high amounts in Hassall's corpuscles. In the epidermis, which shows similarities to Hassall's corpuscles, both subunits were also abundantly expressed, and their expression increased with the differentiation of keratinocytes. FKBP12 was observed to be expressed abundantly, both in Hassall's corpuscles and the entire epidermis. These findings suggest that the differentiated forms of the two cell types, which are the thymic medullary epithelial cell and the keratinocyte, are the target for pharmacological actions of FK506.
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