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  • 1
    Electronic Resource
    Electronic Resource
    Electron emission from diamond coated silicon field emitters (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2842-2844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond thin films have been formed on single crystal silicon field emitters using bias-enhanced nucleation in a microwave plasma chemical vapor deposition system. A diamond nucleation density greater than 1010/cm2 with small grain sizes (〈25 nm) was achieved on the surfaces of silicon emitters with nanometer scale curvature. Field emission from these diamond coated silicon emitters exhibited significant enhancement compared to the pure Si emitters both in total emission current and stability. Using a Fowler–Nordheim analysis a very large effective emitting area of nearly 10−11 cm2 was obtained from the diamond coated Si emitters compared to that of uncoated Si emitters (10−16 cm2). This area was found to be comparable to the entire tip surface area. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112538
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  • 2
    Electronic Resource
    Electronic Resource
    Bias induced diamond nucleation studies on refractory metal substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5119-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carbide forming nature of the substrate appears to be an important property when performing bias-enhanced nucleation (BEN); therefore, various refractory metals were studied since they are known carbide formers. Nucleation densities approaching 1×1010/cm2 were observed on both hafnium and titanium. The nucleation density on tantalum, niobium, and tungsten was enhanced to a lesser extent in descending order of influence, respectively. An induction time prior to the onset of significant diamond nucleation was observed on the refractory metals as well as on silicon and may be reliant upon the formation of a critical carbide thickness. Shorter induction times were observed for silicon which may be explained since this material forms a carbide of typically only several nanometers in thickness as opposed to the refractory metals which may form carbides on the order of several microns in thickness. Also, a strong correlation was observed between the carbide heat of formation and the nucleation densities at 60 min of BEN. These findings verify the relevance of a carbide formation to diamond nucleation via BEN and also provides a clue as to the mechanism(s) by which diamond is nucleating. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359322
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  • 3
    Electronic Resource
    Electronic Resource
    Microphotoluminescence and Raman scattering study of defect formation in diamond films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3951-3957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and Raman spectroscopy are employed to explore the time evolution of defect formation in chemical vapor deposition diamond films for stages of growth spanning nucleation to continuous film formation. Our research is concentrated on three types of defects which give rise to the 1.68 eV optical band, the sp2 phase which centers at 1500 cm−1, and the broadband luminescence at 565–800 nm. The investigation of these types of defects suggests the following conclusions. Si atoms are most likely responsible for the creation of the 1.68 eV optical centers which takes place at the initial stages of growth. Plasma interactions with the Si substrate contribute to the 1.68 eV defect formation. The broad luminescence and sp2 bonding defects were not present in the isolated nuclei but were significantly present when a continuous film was formed. Two rates of diamond growth were obtained and the changes of the rates were attributed to the lowering degree of freedom available for the growth of the nuclei as well as to the formation of the sp2 phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352858
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  • 4
    Electronic Resource
    Electronic Resource
    Positive identification of the ubiquitous triangular defect on the (100) faces of vapor-grown diamond (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 169-172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy and atomic force microscopy were used to index the faces and orientation of the sloping triangular defect which often appears on the {100} surfaces of chemical-vapor-deposited diamond. These features were confirmed to be 〈111〉 penetration twins which appear as sections of cubo-octahedra oriented with a 〈221〉' direction parallel to the "parent'' crystal's {100} surface normal. Multiple twins of this type can give rise to the pentagonal structures usually attributed to simpler combinations of ordinary 〈111〉 twins. The ability to suppress this twin by proper choice of growth conditions is a major factor in controlling the morphology of vapor-grown diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355878
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of surface modification and nucleation during deposition of diamond on silicon by scanning tunneling microscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6400-6405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface topography of silicon substrates after the initial stages of diamond growth, by microwave plasma enhanced chemical vapor deposition, has been observed by scanning tunneling microscopy. The initial surfaces were polished with diamond paste before deposition to enhance nucleation, and the scratches were examined. After one half hour growth, the surface showed additional topography over all regions, and widely spaced faceted structures were detected which were attributed to diamond nuclei. The surface between nuclei showed increased roughness with increased deposition time. The faceted nuclei were found along the scratches. The nuclei showed facets which were smooth to within 5 A(ring). Fingerlike ridge structures were found extending from and in-between some of the nuclei. These structures indicate a mechanism of the lateral diamond growth. The electronic properties of the surface were probed by local I-V measurements, and characteristics attributable to SiC were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348843
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  • 6
    Electronic Resource
    Electronic Resource
    Deposition of aligned bamboo-like carbon nanotubes via microwave plasma enhanced chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6072-6074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aligned multiwall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. Scanning electron microscopy shows that the nanotubes are well aligned with high aspect ratio and growth direction normal to the substrate. Transmission electron microscopy reveals that the majority phase has a bamboo-like structure. Data are also presented showing process variable effects on the size and microstructure of the aligned nanotubes, giving insight into possible nucleation and growth mechanisms for the process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320024
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  • 7
    Electronic Resource
    Electronic Resource
    Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2347-2349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A highly oriented, (100) textured diamond film was grown on a Si substrate, followed by the deposition of an epitaxial boron-doped layer for electrical characterization. Temperature-dependent Hall effect measurements were performed between 180 and 440 K. The 165 cm2/V⋅s hole mobility measured at room temperature is approximately five times greater than the highest reported mobilities for polycrystalline diamond. The relative improvement in the electronic quality of diamond films grown on Si, due to the reduction of misorientation and grain boundary angles, has been demonstrated. X-ray diffraction pole measurements were performed on the (100) oriented film in order to quantify the degree of misorientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109414
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  • 8
    Electronic Resource
    Electronic Resource
    Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1215-1217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical microwave plasma chemical vapor deposition reactor. Separate diamond films from each of the two reactors were analyzed both by scanning electron microscopy and Raman spectroscopy. The in situ carburization is speculated to form an epitaxial SiC conversion layer, thus providing an economical alternative to obtaining epitaxial diamond films on single-crystal SiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108738
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  • 9
    Electronic Resource
    Electronic Resource
    Bias assisted etching of diamond in a conventional chemical vapor deposition reactor (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1803-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique for selectively etching diamond films is presented. This letter describes a technique by which diamond may be etched in a conventional plasma assisted chemical vapor deposition (CVD) reactor at rates comparable to those reported for both electron cyclotron resonance and reactive ion etching techniques. This technique involves negatively biasing the diamond film, while it is immersed in a mostly hydrogen containing plasma. Negative dc bias assisted etching of CVD diamond films is performed in both microwave and dc plasma reactors over a wide range of temperatures and pressures. Speculation on the etching mechanisms is also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109555
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  • 10
    Electronic Resource
    Electronic Resource
    Oriented nucleation and growth of diamond films on β-SiC and Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1792-1794 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented diamond nuclei prepared by bias-enhanced microwave plasma chemical vapor deposition on β-SiC and Si were characterized by x-ray texture diffractometry. In both cases, x-ray pole figures reveal an epitaxial relation between the orientation of diamond nuclei and the substrate. However, the angular spread of the nuclei orientation is rather large, amounting to 9°–13° (FWHM) in both polar and azimuthal directions. When growing thick diamond films on top of these already oriented diamond nuclei, the evolution of the orientational order depends critically on the growth conditions. In the case of 〈100〉 oriented nuclei, growth conditions which favor the formation of a 〈100〉 fiber texture can even improve the degree of orientational order, whereas other growth conditions result in a deterioration of the epitaxial relationship.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110664
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