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  • 1
    Electronic Resource
    Electronic Resource
    Analytical use of the fine features of scattered ion yield curves (1976)
    s.l. : American Chemical Society
    Analytical chemistry 48 (1976), S. 944-945 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60370a037
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  • 2
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of diamond-like amorphous carbon films from graphite and polycarbonate targets (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4123-4130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (a-C) and amorphous hydrogenated carbon (a-C:H) films are produced by 248 nm pulsed laser ablation of graphite and polycarbonate targets in high vacuum conditions. Plasma plumes generated by target irradiation with different laser fluences are investigated with laser induced fluorescence spectroscopy and an electrostatic probe. Ions of C2+ with kinetic energies of several hundred eV are detected in the leading edge of the plasma plumes from both targets. These energetic species are proposed to be responsible for the formation of film structures corresponding to diamond-like carbon (DLC), as it is found from electron-energy-loss spectroscopy (EELS) and Raman investigations of 0.5 μm films deposited onto steel substrates. The validation of a laser wavelength/fluence region for DLC formation found earlier for graphite targets is discussed and expanded to polycarbonate targets. An increase in laser fluence leads to higher percentages of sp3 bonds in the a-C and a-C:H films. For the a-C:H films, the incorporation of large molecular conglomerates ejected from polycarbonate targets results in the formation of unique heterogeneous structures revealed from scanning electron microscopy (SEM) studies. The embedded conglomerates cause a decrease in the a-C:H film hardness to 15 GPa, in comparison to 60 GPa for the a-C films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359871
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  • 3
    Electronic Resource
    Electronic Resource
    Beryllium ion implantation in GaAsSb epilayers on InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 699-709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium ion implantation was used to form high acceptor concentrations in GaAs1−xSbx (0.47≤x≤0.49) epilayers on semi-insulating InP substrates. Two implant doses were tested: Q0=5×1014 cm−2 and Q0=1×1015 cm−2 at an implant energy of E=50 keV. Electrochemical profiling and secondary-ion-mass spectrometry (SIMS) results confirm acceptor concentrations of NA≥1×1019 cm−3 and NA≥2×1019 cm−3 within 1000 A(ring) of the GaAs1−xSbx surface for the lower and higher implant dose, respectively. These results provide a p+ surface layer for low-resistance ohmic contact to GaAsSb-based devices. Optical microscopy and SIMS demonstrate rapid thermal anneal (RTA) temperature limits of T=650 °C for Q0=5×1014 cm−2 and T=600 °C for Q0=1 ×1015 cm−2. The temperature limitation is imposed by destabilization of the GaAs1−xSbx surface through Ga sputtering during implantation, and Ga and As outdiffusion during RTA. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360814
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  • 4
    Electronic Resource
    Electronic Resource
    Fermi level control and deep levels in semi-insulating 4H–SiC (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5040-5044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent Hall effect, optical admittance spectroscopy, and optical absorption measurements of semi-insulating bulk 4H–SiC are reported. Both intentionally vanadium doped material and commercial grade semi-insulating material were investigated. The carrier concentration versus inverse temperature results from Hall effect measurements up to 1000 K indicated the samples were dominated by one of two deep levels near midgap. In addition to the deep donor level of substitutional vanadium, Ec−1.6 eV, we observed another level at Ec−1.1 eV in some samples, indicating that levels other than the vanadium donor can pin the Fermi level in semi-insulating SiC. Optical admittance measurements on the semi-insulating material indicate the presence of levels at Ec−1.73 and 1.18 eV that were previously observed in conducting samples with this technique and we attribute these levels to the same defects producing the 1.1 and 1.6 eV levels seen by Hall effect. Secondary ion mass spectroscopy measurements of dopant and impurity concentrations are reported. Even though vanadium is present in all of these samples, along with other impurities we are at present unable to definitively identify the 1.1 eV level. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371476
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  • 5
    Electronic Resource
    Electronic Resource
    LII,III emission and LIII absorption spectra of vanadium with the electron microprobe (1972)
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 1 (1972), S. 147-150 
    Details
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The characteristic LII,III X-ray emission bands of vanadium in pure metal and nitrides VN0.82 and VN are investigated with an electron microprobe. Results are discussed in relation to the theories proposed in the literature. Also presented is the vanadium LIII absorption spectrum from the pure metal; this spectrum is processed by the self-absorption method.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/xrs.1300010405
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  • 6
    Electronic Resource
    Electronic Resource
    K emission and absorption spectra of nitrogen with the electron microprobe (1973)
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 2 (1973), S. 7-10 
    Details
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The K soft X-ray emission profile of nitrogen in the vanadium nitride VN has been investigated with an electron microprobe. It is shown that this instrument is capable of sufficiently resolving the N K band to provide information about the filled states of the valence band. Moreover, with this same compound, the first K absorption spectrum of nitrogen has been obtained by a self absorption method. VN is only an experimental example. To find the complete picture of the electronic band structure of solid materials, similar emission and absorption spectra of nitrogen in some other interesting compounds can now be surveyed with the electron microprobe.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/xrs.1300020104
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  • 7
    Electronic Resource
    Electronic Resource
    Anisotropic ionic conductivity of lithium-doped sulfonated PBI (1997)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Physics 35 (1997), S. 2925-2933 
    Details
    ISSN: 0887-6266
    Keywords: ionic conductivity ; DC conductivity ; rigid-rod polymer ; depletion measurement ; X-ray scattering ; anisotropic ; polymer electrolyte ; polyelectrolyte ; conducting polymers ; Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The conductivity study results of lithium-doped sulfonated PBI, a conjugated rigid rod polymer, poly[(1,7-dihydrobenzo[1,2-d:4,5-d′]dimidazole-2,6-diyl)-2-(2-sulfo)-p-phenylene], derivatized with pendants of propane sulfonate Li+ ionomer are reported. The room-temperature DC four-probe conductivity parallel to the surface of cast films was as large as 8.3 × 10-3 S/cm. Similar measurements with an eight-probe configuration showed no difference between bulk and surface conductivity. The ionic nature of the conductivity was indicated by constant voltage depletion experiments and by secondary ion mass spectroscopy measurements of the residues near the electrodes. The DC two-probe conductivity measured transverse to the sample surface was three to four orders of magnitude smaller than longitudinal conductivity, while the AC two-probe conductivity was even less. Electron microscopy indicated that the films had a layered structure parallel to the surfaces. This structural anisotropy was confirmed by refractive index values obtained from wave-guide experiments and by wide angle X-ray scattering. © 1997 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 35: 2925-2933, 1997
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Chemical state depth profiles from SIMS ion energy distributions using factor analysis (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 216-218 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The energy distribution curves of secondary ions are affected by the chemical state of surface atoms. Variations in these distributions due to changing chemistry were used to construct chemical state profiles of surface layers. Factor analysis of Ta+ energy distribution curves, recorded while sputter profiling anodized tantalum, is shown to provide quantitative profiles of the two chemical states of tantalum present in the oxide/metal structure.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100407
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  • 9
    Electronic Resource
    Electronic Resource
    Applications of factor analysis to electron and ion beam surface techniques (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 75-86 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Factor analysis, a mathematical technique for extracting chemical information from matrices of data, is used to enhance Auger electron spectroscopy (AES), core level electron energy loss spectroscopy (EELS), ion scattering spectroscopy (ISS), and secondary ion mass spectroscopy (SIMS) in studies of interfaces, thin films, and surfaces. Several examples of factor analysis enhancement of chemical bonding variations in thin films and at interfaces studied with AES and SIMS are presented. Factor analysis is also shown to be of great benefit in quantifying electron and ion beam doses required to induce surface damage. Finally, examples are presented of the use of factor analysis to reconstruct elemental profiles when peaks of interest overlap each other during the course of depth profile analysis.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100204
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of anodic oxides on 304L stainless steel surfaces (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 163-167 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The effects of anodization parameters, such as current density, electrolyte concentration, electrolyte temperature, and anodization time on the thickness and composition of the oxides formed on AISI 304L stainless steel anodized in H2SO4—K2Cr2O7 were studied by low energy electron induced x-ray spectroscopy (LEEIXS), glow discharge optical spectroscopy (GDOS), and inert ion sputter profiling in conjunction with Auger electron spectroscopy. The physical and chemical properties of these films were correlated with the results of mechanical tests performed on adhesively bonded structures of the anodized pieces in order to test the feasibility of anodization as a prebond treatment for stainless steel.Anodization in H2SO4—K2Cr2O7 produces a Cr(III) enriched 100 nm thick oxide film. The novel technique of LEEIXS was used to characterize the chemical state of chromium while the hydrogen content of the anodic oxide was determined by GDOS.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100217
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