Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 1314-1316
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CdTe layers were grown by metalorganic vapor phase epitaxy (MOVPE) on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C and time in the range of 2–4 h using dimethyl-cadmium and diisopropil-tellurium as precursors. The layers were studied by scanning electron microscopy, Rutherford backscattering spectroscopy, and high resolution low-temperature photoluminescence spectroscopy. The surface morphology and RBS and PL spectra of CdTe MOVPE layers are reported and the substrate effect on the layer properties is demonstrated. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118522
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