ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Infrared spectroscopic study of chlorine/oxygen coadsorption on aluminum(111) (1989)
    s.l. : American Chemical Society
    Langmuir 5 (1989), S. 316-318 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00086a003
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Role of stoichiometric point defect in electric-field-poling lithium niobate (2000)
    Springer
    Applied physics 70 (2000), S. 591-594 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.50.Nw; 77.82.Fm; 77.84.Dy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Non-congruent LiNbO3 crystals has been used to determine the influence of the intrinsic defect density in the ferroelectric domain inversion mechanism. The poling processes have been carried out either at high temperature or at RT throughout the electric-field-poling technique. It is shown that the coercive field of LiNbO3 crystals is strongly influenced by the intrinsic defect density in the crystals. Moreover it is shown that it is possible to realign the ferroelectric domain structure of near-stoichiometric LiNbO3 crystals to prepare periodic poled structures which allows second harmonic generation at shorter wavelengths than with congruent crystals at a fixed wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000445
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Iron Oxide and Oxide-Hydroxide Nanoparticles in Organic-Inorganic Matrices (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 514-516 (May 2006), p. 142-146 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Nanometric ferrihydrite, maghemite and magnetite particles formed within an organicinorganic hybrid matrix were obtained by the sol-gel process. In contrast to precipitation techniques, sol-gel process appears as suitable way to achieve size-controlled nanoscopic magnetic particles anchored in a hybrid structure. The hybrid matrix here reported, named di-ureasil, is composed of poly(oxyethylene) chains grafted to siloxane groups by means of urea cross-linkages. The formation of ferrihydrite particles was achieved incorporating iron nitrate during the sol-gelprocess, at low pH. The formation of maghemite takes place after the incorporation of a mixture of Fe3+ and Fe2+ ions and treatment with an ammonia solution, after the sol-gel process. Magnetite nanoparticles are formed after the incorporation of Fe2+ ions and treatment with ammonia at 80ºC. The AC magnetic susceptibility shows thermal irreversibility with a blocking temperature TB≈13K and ≈25K depending on frequency for the ferrihydrite and maghemite particles, respectively. Themagnetite nanoparticles are blocked at room temperature. Above the irreversibility the magnetization of ferrihydrite and maghemite follows a Langevin function modified with a linear term, as found in antiferromagnetic and ferrimagnetic particles
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/12/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.514-516.142.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    An interesting ligand for the preparation of luminescent plastics: The picrate ion (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 3293-3313 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electrolytes formed with poly(oxyethylene), POE, and europium picrate, [Eu(pic)2(OH2)6]pic.6H2O (where pic denotes the picrate anion) or simply Eu(pic)3xH2O, have been investigated by infrared and photoluminescence spectroscopies. The complexes have been represented by POEnEu(pic)3xH2O (where n represents the molar ratio of (OCH2CH2) units per Eu3+ ion). Materials with n ranging from 133 to 11 have been examined. A tentative attribution for the absorption bands of the mid-infrared spectra is presented. The spectral changes detected in the mid-infrared region and the modifications observed in the XRD patterns at increasing salt content show that Eu(pic)3xH2O exerts an effective plasticizing role which leads to the complete supression of crystallinity at n=11. The emission spectra of the complexes and their signature in the νC–O spectral region provide conclusive evidence that the Eu3+ ions are coordinated to the oxygens atoms of the polyether chains over the whole range of compositions studied. The photoluminescence spectra of the POEnEu(pic)3xH2O electrolytes indicate that the Eu3+/ether oxygen complexation occurs with the concomitant partial substitution of water molecules from the cation coordination shell. The luminescence data obtained confirm that the latter aspect is quite advantageous from the standpoint of optical properties. The incorporation of the picrate salt into POE results in a substantial increase in the calculated total radiative contribution for the depopulation of the 5D0 level (from 0.58 to 1.94 ms−1) and in the quantum efficiency (from 5.6 to 41.9%). The analysis of the νaNO2, νsNO2 and νphenCO picrate anion characteristic bands of the spectra of the POE-based complexes suggests that the coordinated picrate ligands of the picrate salt are unaffected by the presence of POE and never leave the lanthanide coordination shell. The absence of diffraction peaks of Eu(pic)3xH2O in the diffractograms of the electrolytes and the recognition that the crystalline regions are essentially composed of pure POE allow us to conclude that the complexation effect occurs exclusively in the amorphous phase. It is probable that the charge carrier in these electrolytes is the non-hydrogen-bonded and uncoordinated picrate ligand of the salt, while the complex cation [Eu(pic)2(OH2)y(OR2)z]+ (where R2O stands for POE, y〈6 and z≥1) is expected to be immobile. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480913
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Study of the Adsorption of Triethylgallium, Ammonia, and Hydrazine on MgO(100) Using Infrared Reflection Absorption Spectroscopy (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 2469-2477 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100060a040
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Study of oxygen chemisorption on the GaN(0001)-(1×1) surface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1190-1200 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Clean, ordered GaN(0001)-(1×1) surfaces are prepared by sputtering with nitrogen ions followed by annealing in ultrahigh vacuum. The surfaces are subsequently exposed at room temperature to O2 and the chemisorption process studied using Auger, valence and core-level photoemission and electron energy loss spectroscopies, low-energy electron diffraction, and work function measurements. Saturation occurs at a coverage of aitch-thetaox=0.4 ML and is accompanied by the removal of surface states near the band edges. The continued presence of a clear (1×1) diffraction pattern, together with other data, indicates a well-defined adsorption site, but the relative importance of Ga–O and N–O bonding remains undetermined. The realization that surface states exist near the valence-band maximum has led to a more accurate determination of the surface Fermi-level pinning position, and of dependent quantities, than given previously. Clean-surface data are also compared with those for surfaces prepared by in situ deposition of Ga metal followed by thermal desorption. No significant differences are seen, which suggests that nitrogen-ion sputtering and annealing is suitable for preparing clean, ordered GaN(0001)-(1×1) surfaces. The results for O chemisorption on atomically clean surfaces have been applied to evaluating the passivation of surfaces prepared by ex situ wet-chemical cleaning. The band bending is found to be ∼0.5 eV less than on atomically clean surfaces. ©1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362924
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The growth and properties of Al and AlN films on GaN(0001)–(1×1) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 110-119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth, structure, and annealing behavior of Al films, formed by in situ vapor deposition on GaN(0001)–(1×1) near 25 °C, have been studied using Auger, electron energy loss, x ray and ultraviolet photoemission spectroscopies and low-energy electron diffraction. Film growth occurs by a Stranski–Krastanov process with reaction at the immediate interface leading to metallic Ga. Annealing at (approximately-greater-than)800 °C leads to release of N, which reacts with Al to form a (1×1)-ordered layer of AlN, possibly alloyed with a small amount of Ga. The AlN layer has been characterized using the various spectroscopies, and the work function, band bending, and electron affinity of GaN and of the AlN overlayer have been obtained. The Al/GaN Schottky barrier height has been measured and compared with previous results for Ni/GaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360917
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Photoemission study of oxygen adsorption on (001) silicon carbide surfaces (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6084-6092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission (ZrMζ, hν=151.4 eV, and MgKα, hν=1253.6 eV) and electron energy loss spectroscopies, low-energy electron diffraction and work-function measurement have been used to study the initial adsorption of oxygen on cubic β-SiC(001) at room temperature. Three different SiC surfaces have been considered—Si-rich [two-domain (3×1) low-energy electron diffraction pattern], stoichiometric [two-domain (2×1)], and Si-deficient [c(2×2)]. Similar data have also been obtained for a Si(001)-(2×1) surface. For SiC the initial rates of O uptake are in the order (2×1)〉(3×1)〉c(2×2), and the rates for all three are much less than that for Si (2×1). A model for the initial adsorption of O on SiC is proposed in which the rates for the different SiC surfaces reflect the relative ease of formation of Si-O-Si bridges between surface Si atoms while the greater rate for Si versus SiC results from the difficulty in inserting O into SiC backbonds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343589
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Simple interpretation of metal/wurtzite–GaN barrier heights (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1170-1171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission data for the dependence of the Schottky barrier height on the metal work function, for n-type wurtzite GaN, are discussed in terms of the Cowley–Sze model [J. Appl. Phys. 36, 3212 (1965)] for a uniform density of surface states in the band gap. It is suggested that, in the context of this model, such barrier heights can be expressed largely as a sum of the "bare-surface barrier height" (i.e., the band bending before contact formation) and a Mott–Schottky term. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370861
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    AlN films on GaN: Sources of error in the photoemission measurement of electron affinity (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1991-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the "true" EA of wurtzite AlN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333716
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...