Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2854-2856
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The local oxide defects observed in thin silicon dioxide films on p-type Si were studied with the electron beam induced current/tunneling current microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was observed that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxide electron beam induced current contrast to the tunneling current microscopy contrast. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114807
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