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  • 1
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    Minimum field strength in precessional magnetization reversal (1999)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1999-08-07
    Description: Ultrafast magnetic field pulses as short as 2 picoseconds are able to reverse the magnetization in thin, in-plane, magnetized cobalt films. The field pulses are applied in the plane of the film, and their direction encompasses all angles with the magnetization. At a right angle to the magnetization, maximum torque is exerted on the spins. In this geometry, a precessional magnetization reversal can be triggered by fields as small as 184 kiloamperes per meter. Applications in future ultrafast magnetic recording schemes can be foreseen.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Back -- Allenspach -- Weber -- Parkin -- Weller -- Garwin -- Siegmann -- New York, N.Y. -- Science. 1999 Aug 6;285(5429):864-7.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratorium fur Festkorperphysik, ETH Zurich, CH-8093 Zurich, Switzerland. IBM Research Division, Zurich Research Laboratory, CH-8803 Ruschlikon, Switzerland. IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10436149" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Origin of magnetization decay in spin-dependent tunnel junctions (1999)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1999-11-13
    Description: Spin-dependent tunnel junctions based on magnetically hard and soft ferromagnetic layers separated by a thin insulating barrier have emerged as prime candidates for information storage. However, the observed instability of the magnetically hard reference layer, leading to magnetization decay during field cycling of the adjacent soft layer, is a serious concern for future device applications. Using Lorentz electron microscopy and micromagnetic simulations, the hard-layer decay was found to result from large fringing fields surrounding magnetic domain walls in the magnetically soft layer. The formation and motion of these walls causes statistical flipping of magnetic moments in randomly oriented grains of the hard layer, with a progressive trend toward disorder and eventual demagnetization.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉McCartney -- Dunin-Borkowski -- Scheinfein -- Smith -- Gider -- Parkin -- New York, N.Y. -- Science. 1999 Nov 12;286(5443):1337-40.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Center for Solid State Science, Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1704, USA. IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10558984" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 3
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    Magnetic domain-wall racetrack memory (2008)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2008-04-12
    Description: Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Parkin, Stuart S P -- Hayashi, Masamitsu -- Thomas, Luc -- New York, N.Y. -- Science. 2008 Apr 11;320(5873):190-4. doi: 10.1126/science.1145799.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉IBM Almaden Research Center, San Jose, CA 95120-6099, USA. parkin@almaden.ibm.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/18403702" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
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    Current-controlled magnetic domain-wall nanowire shift register (2008)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2008-04-12
    Description: The controlled motion of a series of domain walls along magnetic nanowires using spin-polarized current pulses is the essential ingredient of the proposed magnetic racetrack memory, a new class of potential non-volatile storage-class memories. Using permalloy nanowires, we achieved the successive creation, motion, and detection of domain walls by using sequences of properly timed, nanosecond-long, spin-polarized current pulses. The cycle time for the writing and shifting of the domain walls was a few tens of nanoseconds. Our results illustrate the basic concept of a magnetic shift register that relies on the phenomenon of spin-momentum transfer to move series of closely spaced domain walls.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Hayashi, Masamitsu -- Thomas, Luc -- Moriya, Rai -- Rettner, Charles -- Parkin, Stuart S P -- New York, N.Y. -- Science. 2008 Apr 11;320(5873):209-11. doi: 10.1126/science.1154587.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉IBM Research Division, Almaden Research Center, San Jose, CA 95120, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/18403706" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 5
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    Dynamics of magnetic domain walls under their own inertia (2011)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2011-01-06
    Description: The motion of magnetic domain walls induced by spin-polarized current has considerable potential for use in magnetic memory and logic devices. Key to the success of these devices is the precise positioning of individual domain walls along magnetic nanowires, using current pulses. We show that domain walls move surprisingly long distances of several micrometers and relax over several tens of nanoseconds, under their own inertia, when the current stimulus is removed. We also show that the net distance traveled by the domain wall is exactly proportional to the current pulse length because of the lag derived from its acceleration at the onset of the pulse. Thus, independent of its inertia, a domain wall can be accurately positioned using properly timed current pulses.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Thomas, Luc -- Moriya, Rai -- Rettner, Charles -- Parkin, Stuart S P -- New York, N.Y. -- Science. 2010 Dec 24;330(6012):1810-3. doi: 10.1126/science.1197468.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉IBM Almaden Research Center, 650 Harry Road, San Jose, CA, USA. lucthom@us.ibm.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21205666" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 6
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    Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation (2013)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2013-03-23
    Description: Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in correlated insulators. An archetypal correlated material is vanadium dioxide (VO(2)), which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO(2) suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed. We found that electrolyte gating of VO(2) leads not to electrostatically induced carriers but instead to the electric field-induced creation of oxygen vacancies, with consequent migration of oxygen from the oxide film into the ionic liquid. This mechanism should be taken into account in the interpretation of ionic liquid gating experiments.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Jeong, Jaewoo -- Aetukuri, Nagaphani -- Graf, Tanja -- Schladt, Thomas D -- Samant, Mahesh G -- Parkin, Stuart S P -- New York, N.Y. -- Science. 2013 Mar 22;339(6126):1402-5. doi: 10.1126/science.1230512.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉IBM Almaden Research Center, San Jose, CA 95120, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/23520104" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 7
    Electronic Resource
    Electronic Resource
    Superconductivity above liquid nitrogen temperature: preparation and properties of a family of perovskite-based superconductors (1987)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 109 (1987), S. 2848-2849 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00243a061
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  • 8
    Electronic Resource
    Electronic Resource
    ESR study of optically enhanced phase transition in (BEDT–TTF)3Ta2F11 (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 1780-1788 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have identified an optically enhanced magnetic phase transition in the newly synthesized organic molecular charge transfer salt, (BEDT–TTF)3Ta2F11 (BEDT–TTF 3/4 bis-ethylenedithiolotetrathiafulvalene) by ESR absorption measurements in the X band microwave region. At room temperature, only a doublet state ESR absorption is observed, but below 30 K several triplet ESR absorptions appear. The orientation dependence of the ESR absorption under illumination at energies near the band gaps in the material (640 nm, T=12 to 5 K, H0〈0.34 T) indicates that there are rapid spin exchange processes with times τe〈10−8 s near 7 to 5 K along certain crystallographic directions with a temperature dependence suggesting spin-lattice relaxation times which proceed via Van Vleck "direct processes.'' This, to our knowledge, is the first case where the magnetic properties of a charge transfer salt are altered by the interaction with photons of energy equal to the band gaps in a low dimensional solid, providing a new, interesting way to investigate these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452178
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  • 9
    Electronic Resource
    Electronic Resource
    Giant Magnetoresistance in Magnetic Nanostructures (1995)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 25 (1995), S. 357-388 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.25.080195.002041
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of magnetic coupling in sputtered epitaxial Fe/Cr and Co/Cu wedged structures : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4980-4982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the magnetic interlayer exchange coupling in single-crystalline Fe/Cr and Co/Cu wedged multilayers prepared by magnetron sputtering on two orientations of MgO—(100) and (110). Structural examination shows that high quality epitaxial films are obtained in both systems using seeded epitaxy growth techniques. Oscillatory interlayer coupling is observed in Cr-wedged samples grown on both MgO(100) and MgO(110) with similarly long oscillation periods of ∼18 A(ring). These results are comparable to earlier work for molecular beam epitaxy and sputter-deposited epitaxial Fe/Cr structures. Long-period oscillatory coupling is also observed in sputtered Co/Cu(110) for the Cu-wedged structures. Studies of the dependence of magnetic coupling on the thickness of the magnetic layers for fixed Cr layer thickness provides no evidence of any nonmonotonic dependence. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361610
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