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  • 1
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    Minimum field strength in precessional magnetization reversal (1999)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1999-08-07
    Description: Ultrafast magnetic field pulses as short as 2 picoseconds are able to reverse the magnetization in thin, in-plane, magnetized cobalt films. The field pulses are applied in the plane of the film, and their direction encompasses all angles with the magnetization. At a right angle to the magnetization, maximum torque is exerted on the spins. In this geometry, a precessional magnetization reversal can be triggered by fields as small as 184 kiloamperes per meter. Applications in future ultrafast magnetic recording schemes can be foreseen.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Back -- Allenspach -- Weber -- Parkin -- Weller -- Garwin -- Siegmann -- New York, N.Y. -- Science. 1999 Aug 6;285(5429):864-7.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratorium fur Festkorperphysik, ETH Zurich, CH-8093 Zurich, Switzerland. IBM Research Division, Zurich Research Laboratory, CH-8803 Ruschlikon, Switzerland. IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10436149" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrahigh-vacuum linear-rotary transfer mechanism utilizing a bakable self-lubricating bearing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 479-481 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An in vacuo translational-rotational motion based on a ball bearing package is described. Lubrication is accomplished by making the ball retainer from a solid dry lubricant, boron nitride (BN). This eliminates the need to separately coat the balls with lubricant prior to assembly; however, the balls are continuously coated while the bearing is in use.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139653
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced electron spin polarization in photoemission from thin GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1686-1688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102236
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic reversal in perpendicularly oriented thin films subjected to picosecond magnetic fields (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6488-6488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic reversal mechanism in perpendicularly oriented, premagnetized Co based thin film alloys, induced by ultra short magnetic field exposure of a few picoseconds duration has been studied. Field pulses with a magnitude of several thousand Tesla were generated by the 50 GeV final focus electron beam at the Stanford Linear Accelerator Center (SLAC). Characteristic remanent domain patterns are observed in these films long after field exposure using polar Kerr microscopy. Complete reversal of the magnetization is found to occur during a single spin precession event of 6.0 ps duration where the inplane-field amplitude is greater or equal to the macroscopically determined perpendicular anisotropy field. Further, a wide transition range, dividing the reversed and nonreversed regions is observed which is broken into a quasi periodic stripe domain structure with stripe-width 0.3 μm. As a main result of this experimental study we find that magnetization reversal on this time scale is solely governed by the intrinsic effective field, i.e., anisotropy- and demagnetization-field contributions, rather then by complex curling and buckling mechanisms. Unique insight into fundamental spin reversal mechanisms and their ultimate speed in thin magnetic recording films is provided by these experiments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362451
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  • 5
    Electronic Resource
    Electronic Resource
    Electron-spin polarization in photoemission from thin AlxGa1−xAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5189-5192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization of photoemitted electrons from thin AlxGa1−xAs layers grown by molecular-beam epitaxy has been studied as a function of Al concentration by varying x in steps of 0.05 from 0.0 to 0.15. As the fraction x is increased, the wavelength dependence of the polarization shifts toward shorter wavelengths, permitting wavelength tuning of the region of maximum polarization. A maximum electron polarization of 42%–43% is obtained for AlxGa1−xAs samples with x≥0.05 while the maximum polarization of GaAs (x=0) samples reaches 49%. To investigate the lower polarization of AlxGa1−xAs, additional samples have been studied, including a short-period superlattice (GaAs)7 - (AlAs)1 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353744
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic oxygen detection by a silver-coated quartz deposition monitor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1747-1749 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for measuring the flux of atomic oxygen utilizing a silver film on a quartz-crystal deposition rate monitor is described. Measuring the initial oxidation rate of the silver, which is proportional to the atomic oxygen flux, determines a lower limit on the atomic oxygen flux. This method is more direct than measuring the conductance of the silver film, has an intrinsic flux detection range of 1013–1017 atoms/cm2 s, and is reversible by exposing the sensor to an atomic hydrogen flux.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141145
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  • 7
    Electronic Resource
    Electronic Resource
    Surface properties of Cr2O3 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1400-1405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (〈5 nm) air-oxidized Cr layers are deposited on the alumina output windows of radio-frequency klystron tubes to prevent electron multipactor by reducing the secondary electron emission yield of the alumina surface. The top several nanometers of these layers appear to be Cr2O3. To compare the measured surface properties of these layers with those of clean stoichiometric Cr2O3, quasibulk Cr2O3 layers were produced by wet-H2-firing magnetron-deposited Cr films on Cu substrates and characterized by x-ray photoelectron-, Auger electron-, and electron energy loss spectra and secondary electron emission yield measurements. Other properties measured were x-ray diffraction structure, sheet resistance, and optical reflectivity. In particular, the peak of the secondary electron yield was found to be ∼1.7, which is considerably higher than the 〈1 yield value reported earlier in the literature. The Cr2O3 Cr 2p x-ray photoelectron core level spectrum was curve-fit using Doniach–Sunjic line shapes and statistical fitting methods. It is shown that each 2p level is composed of three multiplet-split peaks 1.1 eV apart. In addition, the three 2p1/2 peaks are folded with a 2p3/2 3d satellite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339644
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  • 8
    Electronic Resource
    Electronic Resource
    Valence band XPS study of Fe at finite temperatures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3043-3043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measuring the valence band density of states (DOS) of Fe provides a stringent test of models of metallic ferromagnetism at finite temperatures. The density of states of Fe above the Curie temperature TC, as obtained by self-consistent calculations in the disordered local moment (DLM) picture by Oguchi et al. and Pindor et al. differs strongly from the T=0 DOS calculated by Moruzzi et al. between the Fermi energy and 2-eV binding energy, i.e., the relatively broad peak in the T=0 DOS around 1-eV binding energy is of much smaller amplitude in the T(approximately-greater-than)TC DOS. This effect should be observable by valence band XPS on Fe as a 30% decrease of intensity at about 1-eV binding energy with a typical energy resolution of about 0.8 eV. We have measured the valence band XPS of Fe(100) at room temperature and temperatures above TC. The predicted intensity decrease has not been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335208
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  • 9
    Electronic Resource
    Electronic Resource
    Test of the electronic structure of Fe(100) by absorbed current spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3021-3023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorbed electron current for a clean Fe(100) surface as a function of energy rises steplike at the vacuum-energy cutoff with an absorption close to 1. The smooth decrease of absorbed current at higher electron energy due to secondary electron emission is superimposed by a considerable amount of fine structure, the amplitude of which decreases with increasing energy. These features are found in good agreement with the results of a calculation of the elastic part of the electron reflection coefficient. Further, they are compared with the ferromagnetic electronic bulk band structure calculated above the vacuum energy. From the comparison with the experimental data, the energy dependence of the real and imaginary parts of the inner potential is determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335200
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  • 10
    Electronic Resource
    Electronic Resource
    Surface properties of metal-nitride and metal-carbide films deposited on Nb for radio-frequency superconductivity (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1145-1154 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various effects occur which can prevent attainment of the high Q's and/or the high gradient fields necessary for the operation of radio-frequency (rf) superconducting cavities. One of these effects, multipactor, both causes the cavity to detune during filling due to resonant secondary electron emission at the cavity walls, and lowers the quality factor (Q) by dissipative processes. TiN deposited onto the high-field regions of room-temperature Al cavities has been used at the Stanford Linear Accelerator Center to successfully reduce multipactor in the past. We have therefore studied TiN and its companion materials, NbN, NbC, and TiC, all on Nb substrates under several realistic conditions: (1) as-deposited, (2) exposed to air, and (3) electron bombarded. The studied films (up to 14-nm thickness) were sputter deposited onto sputter-cleaned Nb substrates. Results indicate that all the materials tested gave substantially the same results. The maximum secondary electron yields for as-deposited films were reduced to nearly the preoxidized values after electron bombardment (2–3×1017 electrons cm−2 in the case of NbN and NbC). X-ray photoelectron spectroscopy analysis showed that the oxides (e.g., TiO2 in the case of TiN films) formed during air exposure were slightly reduced (converted to lower oxides) by the electron-beam exposure. Auger electron spectroscopy (AES) showed a slight reduction in the surface O concentration following beam exposure. These results suggest that the chemical nature of top surface layers is responsible for the substantial changes in secondary electron yield observed upon electron-beam exposures and that AES does not reflect this change strongly because of the difficulty in extracting chemical (versus elemental) information from AES. The results indicate that any of these films would be poor choices if simply deposited and exposed to air, but, in fact, the in situ electron bombardment which occurs during cavity operation serves to reduce the secondary electron yield and thereby causes a substantial reduction in multipacting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338159
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