ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage characteristics and deep level transient spectroscopy measurements up to 700 K. In the same temperature range the apparent free carrier concentration was measured by capacitance-voltage characteristics to monitor possiblecompensation effects due to the deep level associated to the induced defects. Introduction rate, enthalpy and capture cross-section of such deep levels were compared and some conclusions about the nature of the defects were drawn
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.359.pdf
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