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  • 1
    Electronic Resource
    Electronic Resource
    Facilitation of the effect of testosterone on male sexual behavior in rats deprived of REM sleep
    Amsterdam : Elsevier
    Behavioral and Neural Biology 51 (1989), S. 46-53 
    Details
    ISSN: 0163-1047
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Psychology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0163-1047(89)90647-X
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  • 2
    Electronic Resource
    Electronic Resource
    AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2146-2148 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold and nickel Schottky barrier photovoltaic detectors have been fabricated on Si-doped AlxGa1−xN layers (0≤x≤0.22) grown on sapphire by metalorganic vapor phase epitaxy. Responsivity is independent of the Schottky metal or diode size, and also of the incident power in the range measured (10 mW/m2–2 kW/m2). A higher visible rejection has been observed in the spectral response of Au photodiodes (〉103). Time response is resistance-capacitance limited, with time constants as short as 14 ns in Al0.22Ga0.78N diodes. Low frequency noise studies are also presented, and detectivities of 6.1×107 and 1.2×107 mHz1/2 W−1 are determined in GaN/Au and Al0.22Ga0.78N/Au detectors, at −2 V bias. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122405
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2081-2091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier photovoltaic detectors have been fabricated on n-AlxGa1−xN(0≤x≤0.35) and p-GaN epitaxial layers grown on sapphire. Their characteristics have been analyzed and modeled, in order to determine the physical mechanisms that limit their performance. The influence of material properties on device parameters is discussed. Our analysis considers front and back illumination and distinguishes between devices fabricated on ideal high-quality material and state-of-the-art heteroepitaxial AlxGa1−xN. In the former case, low doping levels are advisable to achieve high responsivity and a sharp spectral cutoff. The epitaxial layer should be thin (〈0.5 μm) to optimize the ultraviolet/visible contrast. In present devices fabricated on heteroepitaxial AlxGa1−xN, the responsivity is limited by the diffusion length. In this case, thick AlxGa1−xN layers are advisable, because the reduction in the dislocation density results in lower leakage currents, larger diffusion length, and higher responsivity. In order to improve bandwidth and responsivity, and to achieve good ohmic contacts, a moderate n-type doping level (∼1018 cm−3) is recommended. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305838
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  • 4
    Electronic Resource
    Electronic Resource
    High-quality visible-blind AlGaN p-i-n photodiodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1171-1173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and characterization of AlxGa1−xN p-i-n photodiodes (0≤x≤0.15) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible rejection of six orders of magnitude with a cutoff wavelength that shifts from 365 to 338 nm. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances, the transient response becomes non-exponential, with a decay time longer than the RC constant. This behavior is justified by the strong frequency dependence of the device capacitance. By an admittance analysis, we conclude that speed is not limited by deep levels, but by substitutional Mg capture and emission time. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123960
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  • 5
    Electronic Resource
    Electronic Resource
    Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3198-3200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of low dark-current GaN metal–semiconductor–metal (MSM) photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explain and control the performance as a function of residual doping and geometry are applied to GaN-based MSM photodiodes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1475362
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  • 6
    Electronic Resource
    Electronic Resource
    Time response analysis of ZnSe-based Schottky barrier photodetectors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2761-2763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the characterization of ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors grown on semi-insulating GaAs(001) by molecular-beam epitaxy. The spectral response of the devices shows a very sharp cutoff at variable wavelength, determined by the alloy composition, with a large stop-band rejection. Short-wavelength responsivities of 0.10 A/W and detectivities as high as 1.4×1012 cm Hz1/2 W−1 at −3.5 V bias have been achieved. Their time response behavior has been analyzed in detail. When light is switched off, the devices show photocurrent decays in the microsecond range, consisting of two exponential components with very different time constants. The slower component becomes dominant for high load and reverse bias. This behavior is related to the strong frequency dependence of the device capacitance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320038
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  • 7
    Electronic Resource
    Electronic Resource
    High visible rejection AlGaN photodetectors on Si(111) substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2785-2787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Schottky barrier photodetectors based on Si-doped Al0.35Ga0.65N layers grown on Si(111) substrates, for solar UV-band monitoring (λ〈320 nm). The epilayers have been obtained by plasma-assisted molecular-beam epitaxy, showing a full width at half maximum of 15 arcmin in x-ray diffraction measurements. A very high visible rejection (〉104) and a responsivity of 5 mA/W at 257 nm are reached. The detector time response is limited by the resistance×capacitance product, with a minimum time constant of 20 ns in the zero-load-resistance limit. After photodiode voltage breakdown, the effect on the detector response is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126475
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  • 8
    Electronic Resource
    Electronic Resource
    AlGaN metal–semiconductor–metal photodiodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3401-3403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of AlGaN metal–semiconductor–metal photodiodes with sharp cutoff wavelengths from 365 to 310 nm. The detectors are visible blind, with an ultraviolet/visible contrast of about 4 orders of magnitude. The photocurrent scales linearly with optical power for photon energies both over and below the band gap, supporting the absence of photoconductive gain related to space-charge regions. No persistent photoconductivity effects have been detected. Time response is limited by the RC product of the measurement system, the transit time of the device being far below 10 ns. The normalized noise equivalent power at 28 V bias is lower than 17 pW/Hz1/2 in GaN detectors, and about 24 pW/Hz1/2 in Al0.25Ga0.75N photodiodes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123358
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  • 9
    Electronic Resource
    Electronic Resource
    High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 762-764 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal–semiconductor–metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were 〈10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10−24 A2/Hz) up to 5 V, for the undoped GaN MSM detector. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123303
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  • 10
    Electronic Resource
    Electronic Resource
    Photoconductor gain mechanisms in GaN ultraviolet detectors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 870-872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119673
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