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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of formation of 〈110〉 oriented fivefold microcrystallites in diamond films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1659-1661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the formation of 〈110〉 oriented fivefold diamond microcrystallites on {001} silicon substrates using high-resolution transmission electron microscopy (HRTEM). The HRTEM micrographs clearly show that fivefold symmetry in diamond microcrystallites results from twinning in {111} planes, in agreement with electron diffraction data. The five 〈110〉 oriented microcrystallites that provide fivefold symmetry are enclosed by {111} planes. The angles between various planes in these microcrystallites can be directly measured in HRTEM micrographs. The angles between {111} planes are found to vary from 70.5° (ideal) to as much as 74° for some microcrystallites. The boundaries of microcrystallites contain coherent twins with only occasional presence of dislocations to accommodate the misfit. We propose a model for nucleation and formation of fivefold diamond microcrystallites. The proposed model, based upon the presence of a/2〈110〉{001} edge dislocations, is found to be consistent with HRTEM observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101297
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of electrically active defects in diamond (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1391-1393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subjecting natural diamond single crystals to the action of atomic hydrogen in a hydrogen plasma is shown to result in the passivation of interband states in the crystal resulting in a marked reduction in the resistivity to about 105 Ω cm from the expected high resistivity of∼1016 Ω cm. When the hydrogenated crystals are heat treated in a neutral ambient, the hydrogen can be expelled from the crystals, restoring the high resistivity. The behavior of natural diamond crystals, with respect to the effects of hydrogen, is shown to be similar to the behavior of diamond thin films synthesized by plasma-enhanced chemical vapor deposition techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101604
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  • 3
    Electronic Resource
    Electronic Resource
    Resistivity of chemical vapor deposited diamond films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 975-977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films grown by plasma chemical vapor deposition techniques display a fairly low resistivity (∼106 Ω cm). Heat treating the films causes an increase in the resistivity by up to six orders of magnitude. The low resistivity of the as-grown films is postulated to be due to hydrogen passivation of traps in the films. Annealing causes dehydrogenation resulting in the electrical activation of deep traps with an attendant increase in the resistivity. This mechanism has been confirmed by an observed reduction of the resistivity of the heat-treated films when they are subjected to a plasma hydrogen treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101694
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  • 4
    Electronic Resource
    Electronic Resource
    On epitaxial growth of diamond films on (100) silicon substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1823-1825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated characteristics of polycrystalline diamond thin films formed by plasma-enhanced chemical vapor deposition method on silicon substrates using Raman spectroscopy, analytical and high-resolution transmission electron microscopy techniques. Grains with average size 1 μm in diameter were observed in these films. The Raman spectra from these films contain the strongest peak at 1335 cm−1, providing the characteristic signature for sp3 (diamond) bonding. The broad peak centered around 1550 cm−1 is believed to be due to some graphitic bonding. From detailed high-resolution images and microdiffraction, films were characterized to be cubic diamond with a lattice parameter of 3.56 A(ring). Diamond crystallites with fivefold external morphologies were also observed. The large crystallites in the films exhibited preferential texture in 〈011〉 type orientations. These crystallites were found to be twinned in {111} planes. The large 〈011〉 crystallites exhibited matching in {111} or {200} lattice planes of diamond with {022} planes of silicon. This is in agreement with our previous work on the growth of Ni on MgO, which showed that textured growth can occur by matching a set of lattice planes in the absence of matching of lattice constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99791
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical conductivity of combustion flame synthesized diamond (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2229-2231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conductivity, from room temperature to 1000 °C, of combustion flame synthesized diamond films and free-standing diamond slabs are demonstrated to be up to two orders of magnitude lower than that of type IIa natural diamond crystals. The low conductivity, indicative of high purity, has been achieved at diamond growths rates of 5–10 μm/h, considerably higher than that achievable with other diamond synthesis techniques. These high growth rates have been achieved over areas of 5 cm×5 cm and both thin (10 μm) films on silicon substrates and thick (∼80 μm), free-standing diamond slabs exhibit similar electrical behavior. The high purity of this diamond is attributed to the presence of oxidizing species in the flame ambient which are more effective than hydrogen in removing any nondiamond forms of carbon and other impurities from the growing diamond film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111685
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence for ledge growth and lateral epitaxy of diamond single crystals synthesized by the combustion flame technique (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 246-248 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The synthesis of diamond at high temperatures ((approximately-greater-than)1000 °C) utilizing the combustion flame technique is shown to result in the growth of diamond single crystals with a {100} habit. Evidence for ledge growth and lateral epitaxy of diamond on nondiamond substrates is presented and it is postulated that the propagation of {100} faces is enhanced by the presence of oxidizing specie in the flame ambient that preferentially remove nondiamond bonded species from the deposits as well as etch the diamond surface to create growth ledges. The ledges are most readily formed on {100} surfaces and single-crystal growth occurs by the lateral propagation of the ledges created by oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104703
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  • 7
    Electronic Resource
    Electronic Resource
    Nucleation enhancement of diamond synthesized by combustion flame techniques (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 348-350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation density and the morphology of diamond crystals and films, synthesized by the combustion flame technique, are shown to be strongly influenced by the nucleation processes at work. Nucleation of diamond on a mechanically abraded molybdenum surface results in well-formed cubo octahedrons with a relatively low nucleation density. Nucleation on an initially formed, diamond-like carbon layer markedly increases the nucleation density and alters the morphology of the diamond crystals and film. The enhancement of nucleation by diamond-like carbon layers is postulated to be a result of the high surface defect density and the high hydrogen concentration of these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103688
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  • 8
    Electronic Resource
    Electronic Resource
    Cathodoluminescence investigation of impurities and defects in single crystal diamond grown by the combustion-flame method (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1310-1312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) in a transmission electron microscope has been used to investigate impurities and defects in single crystals in diamond films grown by the combustion-flame method and correlate them with the microstructure. Nitrogen was present in a number of different impurity defect forms; band A emission was correlated with dislocations while the defect giving rise to the 575 nm vibronic band was the only defect observed in fault-free crystal. Several other nitrogen-related defects were also observed to a lesser extent. The spatial distribution of these defects varied greatly and residual stresses in the 0.7–1.8 GPa range were estimated. In one single crystal, the relative intensities of the bands in the CL spectra acquired at various locations suggest that dislocation density, though variable, is highest at the nucleation end.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107326
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  • 9
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    Dislocation sources in silicon (1973)
    Springer
    Details
    Publication Date: 1973-03-01
    Print ISSN: 1073-5623
    Electronic ISSN: 1543-1940
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Springer
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  • 10
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    Electrical effects of SiC inclusions in EFG silicon ribbon solar cells (1976)
    American Institute of Physics
    Details
    Publication Date: 1976-06-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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