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  • 1
    Electronic Resource
    Electronic Resource
    Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3535-3537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3 substrate is presented to demonstrate the utility of the method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350619
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  • 2
    Electronic Resource
    Electronic Resource
    Electron irradiation induced outgrowths from quartz (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4125-4127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The irradiation of natural and ultrapure synthetic crystalline quartz by a stationary electron beam produces surface outgrowths, which have been analyzed using scanning electron microscopy, atomic force microscopy, cathodoluminescence spectroscopy, and microscopy. Oxygen enrichment of the quartz surface occurs due to electromigration resulting from the trapped charge induced electric field. It is proposed that the accumulated oxygen is incorporated into the quartz surface structure as peroxy linkages, the formation of which results in the permanent volume increase observed as amorphous outgrowths on crystalline quartz. A cathodoluminescence emission at 2.3 eV localized on the outgrowths, is attributed to an intrinsic process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359499
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  • 3
    Electronic Resource
    Electronic Resource
    Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 76-78 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-n junction were obtained from a Si P+PN power diode. Behavior of the junction contrast as a function of imaging conditions is unrelated to reported GSED contrast formation mechanisms [ A. L. Fletcher, B. L. Thiel, and A. M. Donald, J. Phys. D 30, 2249 (1997)]. Optimum imaging conditions are presented, and the contrast behavior is interpreted in terms of a previously unreported induced current component in GSED images. The presented technique is unique as it will enable imaging of depletion layers in uncoated semiconductor/oxide devices in controlled gaseous environments at elevated specimen temperatures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124281
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  • 4
    Electronic Resource
    Electronic Resource
    Depth profiling of GaN by cathodoluminescence microanalysis (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1114-1116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentration which was found to increase with depth. The results are consistent with the (ON–VGa)2− complex model of YL centers [J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996) and T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1996)]. Depth profiling of the near-edge emission in GaN layers thicker than ∼0.5 μm is not possible due to strong self-absorption. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123460
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  • 5
    Electronic Resource
    Electronic Resource
    Detection of Cr impurities in GaN by room temperature cathodoluminescence spectroscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3983-3985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trace levels of Cr impurities in epitaxial GaN grown on sapphire substrates were investigated using cathodoluminescence (CL) spectroscopy. CL emissions characteristic of Cr in an octahedral crystal field were observed from β−Ga2O3 overlayers produced on GaN by post-growth thermal annealing in dry O2. Cr luminescence was also observed from the sapphire substrates, a likely source of the Cr contaminant. The presented results illustrate the use of β−Ga2O3 overlayers as high sensitivity indicators of the presence of Cr in GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125528
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5014-5020 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of anodic oxide induced intermixing on the structural and optical properties of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-sectional transmission electron microscope (XTEM) observation, temperature dependent photoluminescence (PL) and cathodoluminescence (CL) imaging were used. Intermixing was achieved by pulsed anodic oxidation of the GaAs cap layer and subsequent rapid thermal annealing, was verified by XTEM analysis. A significant enhancement of QWR PL is observed accompanied by a notable blueshift of the sidewall quantum well (SQWL) PL due to the intermixing. Furthermore, an extended necking region is observed after the intermixing by spatially resolved CL. The temperature dependence of the PL intensities of both SQWL and QWR show maxima at approximately T∼110 K indicating the role of the extended necking region in feeding carriers to SQWL and QWR. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363546
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  • 7
    Electronic Resource
    Electronic Resource
    Electron irradiation-induced changes in the surface topography of silicon dioxide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4308-4314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The irradiation of crystalline (α-SiO2) and amorphous (a-SiO2) silicon dioxide with a stationary electron beam produces characteristic changes in the surface topography. The development of these changes has been investigated using cathodoluminescence spectroscopy and microscopy, scanning probe (atomic force) microscopy, and scanning electron microscopy. Electron irradiation produces a permanent volume increase on (crystalline) α-SiO2, while in (amorphous) a-SiO2 an initial small volume increase is followed by volume loss as irradiation continues. The observed changes are consistent with electromigration of oxygen under the influence of the electric field induced by charge trapping at preexisting or irradiation-induced defects. Oxygen enrichment may produce expansion of the surface region due to the formation of peroxy linkage defects. In a-SiO2, charges trapped by defects at grain boundaries produce enhanced electric fields which may result in volume reduction at the surface, when critical field strengths are exceeded. The observed volume reductions may be attributed to electron stimulated desorption of constituents, in particular oxygen mass loss, and densification of the surface region associated with the formation of oxygen-deficient defect centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363379
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  • 8
    Electronic Resource
    Electronic Resource
    Stable single mode hybrid laser with high power and narrow linewidth (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2634-2636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe hybrid lasers combining a semiconductor gain section and fiber cavity with integrated chirped Bragg reflector. These devices have produced output powers of 27.5 mW in a narrow linewidth (400 KHz) stable single longitudinal mode. The use of a chirped reflector to stabilize the single mode output, and correct grating orientation are described. The laser output has a side-mode suppression ratio of over 55 dB at 27.5 mW output, and relative intensity noise (RIN) below 160 dB/Hz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111475
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  • 9
    Electronic Resource
    Electronic Resource
    Identification and mapping of the amorphous phase in plasma-sprayed hydroxyapatite coatings using scanning cathodoluminescence microscopy (1998)
    Springer
    Journal of materials science 9 (1998), S. 797-802 
    Details
    ISSN: 1573-4838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract The presence and distribution of the amorphous phase is a key factor in the performance and bone-bonding behavior of plasma-sprayed hydroxyapatite coatings. Microanalysis of coatings was conducted with microprobe Raman and scanning cathodoluminescence microscopy. It was confirmed that the darker regions in polished cross sections represent the amorphous phase. The more intense cathodoluminescence emission from the amorphous phase during electron-beam irradiation compared with the crystalline phase was used to detect the two structurally different areas within the sample. By selecting the peak of the emission at 450 nm it was possible to raster the surface with the electron beam and produce a map of the amorphous phase in polished sections, a fracture surface and an as-sprayed surface of the plasma-sprayed coating. Cathodoluminescence microscopy, based on the different light emission from the amorphous phase and hydroxyapatite, is a useful tool for identifying and mapping of the amorphous-phase constituent in plasma-sprayed coatings. © 1998 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008983809316
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  • 10
    Electronic Resource
    Electronic Resource
    Cathodoluminescence microanalysis of natural hydrated amorphous SiO2; opal (1997)
    Springer
    Physics and chemistry of minerals 24 (1997), S. 131-138 
    Details
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract  Natural amorphous hydrated silicon dioxide (opal) has been investigated for the first time using Cathodoluminescence microanalysis in a Scanning Electron Microscope. Defect centers have been identified and imaged with high sensitivity and high spatial resolution. Intrinsic defects identified include the non bridging oxygen hole center (NBOHC) and the oxygen deficient centers (ODC). Impurities are strongly correlated with the grain structure of the precious opal and a higher than average concentration of impurity defects are observed at grain boundaries and cracks. Impurity associated defect centers include the NBOHC with −OH precursor, and the charge compensated substitutional Al, Ti, and Fe centers. Cathodoluminescence microanalysis provides important information about the defect structure and long term stability of precious opal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002690050026
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