Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 5959-5962
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A simplified model of the mechanism of dislocation reduction in epilayers grown on compliant substrates by molecular-beam epitaxy has been developed based on the dislocation theory and detailed experiments. Theoretical results calculated with this model indicate that up to 100-fold defect reduction can be achieved by using a silicon-on-insulator compliant substrate for the thick epilayer growth as compared to that of using a conventional Si substrate. The advantage of growing thick epilayers on compliant substrates can be predicted quantitatively. The mechanism of a nearly dislocation-free SiGe alloy, as well as GaAs epilayers grown on silicon-on-insulator compliant substrates, is explained and the dislocation density calculated with this model is in good agreement with our experimental results. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1413712
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