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  • 1
    Monograph available for loan
    Monograph available for loan
    Fiber bragg gratings : fundamentals and applications in telecommunications and sensing (1999)
    Boston [u.a.] : Artech House
    Details Availability
    Call number: M 00.0085
    Type of Medium: Monograph available for loan
    Pages: xiv, 422 S.
    ISBN: 0890063443
    Classification:
    Engineering
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Spatial dependence of ultrafast carrier recombination centers of phosphorus-implanted and annealed silicon wafers (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 856-858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the spatial dependence of the carrier recombination centers induced in phosphorus-implanted and annealed silicon wafers have been examined. Ultrafast time-resolved reflectivity measurements of a set of phosphorus-implanted annealed silicon wafers (1016 P+/cm2) as a function of position on the wafer have been carried out, and an x–y map of the carrier lifetime for each of the samples has been obtained. Measurements reveal distinct features of the distribution of carrier recombination centers for the nonannealed and annealed samples between 350 °C and 1100 °C in an area of 36×36 μm2 with resolution better than 3 μm. The presence of islands of clusters in ion-implanted and annealed samples is also discussed in this letter. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497723
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence measurements on phosphorus implanted silicon: Annealing kinetics of defects (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 796-800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoluminescence measurements are performed in order to study the effect of thermal annealing on phosphorus implanted silicon wafers. Measurements are carried out at near band gap excitation with a Nd:YAG laser operating at 1.06 μm. Photoluminescence measurements are also carried out with 0.488 μm laser excitation. It was found that implantation conditions (dose and energy) and annealing temperature strongly influence the intensity of the photoluminescence signal. Contribution from the bulk silicon and the effects from the ion implantation to the photoluminescence signal are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360337
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  • 4
    Electronic Resource
    Electronic Resource
    Optical spectroscopy on implanted and annealed silicon wafers: Plasma resonance wavelength (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3377-3384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75–4 μm and 3–25 μm. In the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356097
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  • 5
    Electronic Resource
    Electronic Resource
    Non-contacting measurements of photocarrier lifetimes in bulk- and polycrystalline thin-film Si photoconductive devices by photothermal radiometry (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5332-5341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced and frequency-scanned infrared photothermal radiometry was applied to a crystalline-Si photoconductive device, and to polysilicon thin-film photoconductors deposited on oxidized Si substrates by an LPCVD method. A detailed theoretical model for the radiometric signal was developed and used to measure the free photoexcited carrier plasma recombination lifetime, electronic diffusivity and surface recombination velocity of these devices, with the simultaneous measurement of the bulk thermal diffusivity. A trade-off between detectivity/gain and frequency-response bandwidth was found via the lifetime dependence on the wafer background temperature rise induced by Joule-heating due to the applied bias. This effect was most serious with the bulk-Si device, but was limited by the high resistivity of the LPCVD thin-film devices. In the case of the bulk-Si device, the results of photothermal radiometry were compared with, and corroborated by, frequency-scanned photocurrent measurements. More sophisticated analysis was shown to be required for the interpretation of the polysilicon photoconductor frequency-responses, perhaps involving the fractal nature of carrier transport in these grain-structured devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363472
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  • 6
    Electronic Resource
    Electronic Resource
    Raman spectroscopy and spreading resistance analysis of phosphorus implanted and annealed silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8032-8038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356543
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature-induced reflectivity changes and activation of hydrogen sensitive optically thin palladium films on silicon oxide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3331-3338 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The optical properties of several thin metal film palladium-silicon oxide structures are examined at room temperature before and after annealing to 200 °C and also at 90 °C—in all cases in the presence of hydrogen gas. Multicycling sample activation is shown to occur in the presence of hydrogen at room temperature with an increase in reflectivity on exposure to hydrogen, in contrast to thicker 80 Å films. The reflectivity change increases with increasing film thickness (1–10 Å). The surface activation at room temperature, before and after annealing to 200 °C, is compared with the performance at 90 °C, where it is shown that heat treatment strongly influences the behavior of the metal film.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149116
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  • 8
    Electronic Resource
    Electronic Resource
    Narrow linewidth excimer laser for inscribing Bragg gratings in optical fibers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3112-3115 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A spectrally narrow linewidth KrF excimer laser has been developed for the application of writing Bragg gratings in optical fibers. Two air spaced etalons 80 and 6 cm−1 have been incorporated within the laser cavity resulting in a laser line with a linewidth of approximately 4 pm. A stable wavelength setting for writing Bragg gratings has been achieved without the necessity of a feedback mechanism. A study of the formation of Bragg grating in optical fibers with this narrow linewidth KrF excimer laser has been carried out. High quality gratings have been demonstrated in hydrogen sensitized fibers with a pulse energy density as low as 20 mJ/cm2. Limitations and various problems encountered in inscribing Bragg gratings (such as two simultaneous grating lines) with the narrow linewidth excimer laser source are also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145538
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen gas detection via photothermal deflection measurement (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3544-3552 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A study of a thermal wave hydrogen sensor interrogated via transverse optical beam deflection spectroscopy is presented. The sensor is a thin film polyvinylidene fluoride film coated with a thin palladium layer. The sensitivity to hydrogen results from thermal boundary condition changes at the gas–film interface and depends upon the thermophysical properties of the gas. A simple one-dimensional model is developed to qualitatively and semi-quantitatively describe the experimental results and it shows good agreement with the experiment. Concentrations of 0.1% hydrogen in the presence of a balanced air mixture and at room temperature were measured for this sensor and they indicate possible sensitivities approaching 100 ppm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148320
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  • 10
    Electronic Resource
    Electronic Resource
    Photomodulated thermoreflectance detection of hydrogen gas using optically thin palladium film on silicon oxide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1505-1511 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The sensitivity of various thicknesses of optically thin film palladium layers evaporated onto silicon oxide substrate is investigated in the presence of a hydrogen/air atmosphere at room temperature. The magnitude of the resulting reflectivity change is measured using an excite-probe technique, through laser excited photothermal modulation of a probe beam. This allows for the recovery of information from both the amplitude and phase channels of the hydrogen sensor output. Data indicates that concentrations of 0.1% hydrogen in the presence of a balanced air mixture and at room temperature may be measured with an 8 nm palladium film. The presence of inhomogeneities in the palladium layers leads to anomalous behavior. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148787
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