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  • 1
    Electronic Resource
    Electronic Resource
    Parametric dependence of the properties of pulsed-laser-deposited diamond-like carbon films (1996)
    Springer
    Applied physics 63 (1996), S. 287-292 
    Details
    ISSN: 1432-0630
    Keywords: 68.60 ; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The properties of Pulsed-Laser-Deposited Diamond-Like Carbon (PLD DLC) films are studied as functions of the power densityΦ and the wavelengthλ of the laser beam, and the incident angleϑ of the beam relative to the normal of the target surface. All the films have a similar structure consisting of graphite particulates embedded in a continuous matrix, so the macroscopic performance of the films is determined by the overall contributions of the particulates and the matrix. The use of higherΦ, shorterλ, or largerϑ leads to an enhancement of the diamond-like characteristics and a simultaneous increase of the particulate density. These two effects give opposite contributions to the electrical conductivityσ R, leading to the following results. (i) σR drops with increasingΦ in the lowΦ range (region I) due to the stronger diamond-like nature of the matrix, but increases sharply afterΦ has exceeded a thresholdΦ min as a result of the rapid increase in particulate density. (ii) In region I, the use of shorterλ or largerϑ leads to a more diamond-like matrix, and this overwhelms the degradation effect caused by the slight increase in particulate density. The samples thus become more insulating. In the highΦ region (region II), however, the use of shorterλ or largerϑ gives rise to higher particulate density, thereby increasing the electrical conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567883
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  • 2
    Electronic Resource
    Electronic Resource
    A comparative study on the binding characteristics of the tight serum biliverdin-protein complexes in two fishes: Anguilla japonica and Clinocottus analis
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 84 (1986), S. 393-396 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(86)90096-9
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  • 3
    Electronic Resource
    Electronic Resource
    A ferrocene-intercalator conjugate with a potent cytotoxicity
    Amsterdam : Elsevier
    Bioorganic & Medicinal Chemistry Letters 2 (1992), S. 929-932 
    Details
    ISSN: 0960-894X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0960-894X(00)80590-9
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  • 4
    Electronic Resource
    Electronic Resource
    A novel induction heater for chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1174-1176 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140281
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of Si incorporation on the structural change of a-BxSi1−x alloy films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6094-6099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous BxSi1−x films can be easily prepared by low-pressure chemical vapor deposition over the whole range of x from 0 to 1. In this article, the structural change of BxSi1−x films (0≤x≤1) was studied by x-ray diffraction and infrared (IR) absorption experiments. It was found that these two methods are complementary to each other. X-ray results showed that when x is decreased, there is a gradual transition from the a-B structure, through the SiB4 structure, to the amorphous silicon structure. The transition to a-Si structure is complete at a surprisingly high boron concentration of around 40 at. %. Infrared data also revealed an unexpected result—that the presence of boron suppresses the formation of Si—H types of bonds in high silicon content films, in strong contrast to films prepared by the glow discharge method. Another interesting feature of the IR absorption spectra is the predominance of an absorption band, related to the presence of boronlike icosahedral clusters, in all films with boron concentration to as low as 17.6 at. %. Such clusters may be responsible for the easy formation of an impurity band lying about 0.2 eV above the valence mobility edge, as observed by transport measurements of boron-doped a-Si films prepared by low-pressure chemical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355171
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  • 6
    Electronic Resource
    Electronic Resource
    Reactive pulsed laser deposition of CNx films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2652-2654 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride (CNx) films were prepared by reactive pulsed laser deposition at nitrogen partial pressure PN2varying from 0 to 300 mTorr. It is found that the atomic fraction of nitrogen f in the films first increases with increasing PN2, reaches a maximum of 0.32 at PN2=100 mTorr, and then decreases to a saturated value of 0.26 at PN2(approximately-greater-than)200 mTorr. Because of the absence of energetic particles in reactive pulsed laser deposition, the limited nitrogen content cannot be attributed to preferential sputtering of nitrogen that is generally observed in particle-assisted deposition of CNx films. Infrared absorption experiments show the existence of C≡N bonds and graphitic sp2 bonds. The sp2 bonds become IR active because of symmetry breaking of graphitic rings as a consequence of nitrogen incorporation. CNx films deposited at low PN2 (e.g., 5 mTorr) are more graphitic than the diamondlike pure carbon sample deposited at PN2=0, so have a slightly narrower electron band gap Eopt and a significantly higher room-temperature electrical conductivity σR. At PN2(approximately-greater-than)200 mTorr, nitrogenation of the films is very pronounced, leading to a wide band gap (Eopt(approximately-greater-than)1.5 eV), long electron band tail (E0(approximately-greater-than)0.7 eV), and extremely low σR(〈1×10−13 Ω−1 cm−1). In addition, both the hardness and Young's modulus are greatly reduced, for example, from 41.3 and 285 GPa for the pure carbon sample to 1.2 and 23.8 GPa, respectively, at f=0.32. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113114
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  • 7
    Electronic Resource
    Electronic Resource
    Structural and mechanical properties of (B0.5−xSix)N0.5 films synthesized by dual-ion-beam deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3501-3503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and mechanical properties of ion-beam deposited (B0.5−xSix)N0.5 films (0≤x≤0.5) were characterized by x-ray photoelectron spectroscopy, infrared absorption experiments, and nanoindentation tests. A single-layer BN film (x=0) has 70 vol. % in cubic phase (c-BN), and a hardness of 38 GPa. However, it peeled off very soon after deposition due to the high internal stress. If a buffer layer was deposited first, followed by a (B0.5−xSix)N0.5 film with x≈0.013, the whole configuration adhered very firmly to both quartz and silicon substrates. This improvement in adhesion was probably due to the formation of Si–N bonds, which served to release partly the stress inside the (B0.5−xSix)N0.5 films. Since the Si content was low, the film structure remained highly cubic, and there was no observable drop in hardness. For higher x, the cubic structure in (B0.5−xSix)N0.5 films disappeared rapidly and was replaced by a hexagonal structure. This structural change led to a rapid drop in hardness from 38 to 12 GPa. As x was further increased, more Si–N bonds were formed in the (B0.5−xSix)N0.5 layers. As a result, the hardness increased from the minimum value to a value ≈24 GPa. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117225
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  • 8
    Electronic Resource
    Electronic Resource
    Deep-level photoluminescence studies of undoped and tin-doped (LEC) InP (1994)
    Springer
    Journal of materials science 5 (1994), S. 215-220 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A appeared in both undoped and doped samples, but it disappeared after RTA for all the samples. It is suggested that band A is due to the formation of a complex involving VIn with residual impurities. The disappearance of band A after RTA is concomitant with the appearance of bands B, C and D. The existence of band B is attributed to the complex formation of VP with residual impurities. Band C was observed after the annealing process both in undoped and lightly-tin-doped samples and is believed to be due to the formation of VP single point defects. Band D was only observed in heavily doped samples and it is believed to be the effect of InP antisite defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00186188
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  • 9
    Electronic Resource
    Electronic Resource
    Antitumor antibiotics drug design. Part I. Synthesis of a 6-chloro-2-methoxy-9-triethylenetetraaminoacridine iron complex which binds to DNA and causes strand scissioning in vitro
    Amsterdam : Elsevier
    Inorganica Chimica Acta 123 (1986), S. 221-223 
    Details
    ISSN: 0020-1693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0020-1693(00)85678-9
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  • 10
    Electronic Resource
    Electronic Resource
    Parametric dependence of the properties of pulsed-laser-deposited diamond-like carbon films (1996)
    Springer
    Applied physics 63 (1996), S. 287-292 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.60; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The properties of Pulsed-Laser-Deposited Diamond-Like Carbon (PLD DLC) films are studied as functions of the power density Φ and the wavelength λ of the laser beam, and the incident angle ϑ of the beam relative to the normal of the target surface. All the films have a similar structure consisting of graphite particulates embedded in a continuous matrix, so the macroscopic performance of the films is determined by the overall contributions of the particulates and the matrix. The use of higher Φ, shorter λ, or larger ϑ leads to an enhancement of the diamond-like characteristics and a simultaneous increase of the particulate density. These two effects give opposite contributions to the electrical conductivity σR, leading to the following results. (i) σR drops with increasing Φ in the low Φ range (region I) due to the stronger diamond-like nature of the matrix, but increases sharply after Φ has exceeded a threshold Φmin as a result of the rapid increase in particulate density. (ii) In region I, the use of shorter λ or larger ϑ leads to a more diamond-like matrix, and this overwhelms the degradation effect caused by the slight increase in particulate density. The samples thus become more insulating. In the high Φ region (region II), however, the use of shorter λ or larger ϑ gives rise to higher particulate density, thereby increasing the electrical conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567883
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