ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We investigated the expansion of single Shockley stacking faults (SSFs) in a 4H-SiCepitaxial layer under high-intensity scanning laser beam during room temperature photoluminescencemapping, which is similar to the degradation of bipolar pin diodes during forward current injection.In an epitaxial layer on an 8 off-axis (0001) substrate, the SSF-related intensity patterns induced byscanning high-intensity laser beam were classified into two types. The first one was a triangularpattern and the second a pattern which expanded in accordance with the motion of the scanning laserbeam. The origins of the SSFs responsible for both patterns are presumably due to the preexistingbasal plane dislocations and the dislocation-loops on the basal plane in the epitaxial layer,respectively. On the other hand, most of the SSF-expansion in on-axis (11 2 0) epitaxial layers weresimilar to the second type in the (0001) epitaxial layer. We, therefore, suggest that thedislocation-loops, which were located close to the surface, were dominant nucleation-sites of theSSFs in the (11 2 0) epitaxial layers
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.349.pdf
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