ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The detailed properties of the dislocations of SiC crystals were analyzed usingultrahigh-quality substrates manufactured by RAF (repeated a-face) growth method by means of bulkX-ray topography. From this analysis, we could reveal the detailed features of one type of basal planedislocations and two types of threading dislocations. The basal plane dislocations were screw typewith Burgers vector were parallel to 〈11-20〉 direction. One of the threading dislocations was mixedtype close to screw dislocation parallel to the growth direction with Burgers vector of 1c+na (n=0, 1, 2,…). Another was the edge type parallel to the c-axis, which was lying between two basal planedislocations. Moreover, these dislocations were found to be connecting with each other, constitutinglarge network structures
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.407.pdf
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