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  • 1
    Electronic Resource
    Electronic Resource
    A point mutation in norA gene is responsible for quinolone resistance in Staphylococcus aureus
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 172 (1990), S. 1028-1034 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(90)91549-8
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of the genomic region determining serotype specificity of Vibrio cholerae O1
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 175 (1991), S. 679-684 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(91)91619-N
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  • 3
    Electronic Resource
    Electronic Resource
    Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1170-1178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present extensive systematic study of defect introduction rates as a function of boron, gallium, oxygen, and carbon concentrations by means of deep level transient spectroscopy has drawn a quite complete picture towards the identification of the dominant radiation-induced defects in Si. The radiation-induced defect EV+0.36 eV has been identified as Ci–Oi complexes. The absence of an EC−0.18 eV complex center in gallium-doped samples and the linear dependence of its introduction rates on both the boron and oxygen content fixed its identification as the Bi–Oi complex in boron-doped Si. One of the technologically important results of present study is that the gallium appears to strongly suppress the radiation induced defects, especially hole level EV+0.36 eV (Ci–Oi), which is thought to act as a recombination center as well as the dominant compensating center at EC−0.18 eV (Bi–Oi). As a result, the effects of lifetime degradation and carrier removal could be partially offset to higher radiation fluences by using Ga as a dopant instead of boron in Si space solar cells. The anneal out of the new hole level EV+0.18 eV in gallium-doped samples at around 350 °C, together with recovery of free carrier concentration, suggests that this level may act as a donor-like center which compensates free carrier concentration in gallium-doped Si. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384855
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature and selective growth of β-SiC using the SiH2Cl2/C3H8/H2/HCl gas system (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4535-4537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: β-SiC is grown on a Si (100) substrate by the chemical vapor deposition method using the SiH2Cl2/C3H8/H2/HCl/ gas system. The addition of HCl to the SiH2Cl2/C3H8/H2 gas system makes it possible to grow stoichiometric β-SiC at the low temperature of 1000 °C. Moreover, β-SiC selective deposition on a Si (100) surface, with no nucelation on a SiO2 surface, is achieved in more than 1.5% HCl concentration. The mechanism of low-temperature selective β-SiC growth due to HCl addition is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343922
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of the B+ and P+ implanted C60 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 318-322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity control of the boron and phosphorus ion implanted C60 films subjected to various doses with multiple energy has been investigated. Temperature dependent conductivity shows the semiconducting nature of the B+ and P+ implanted films. Fourier transform infrared spectra of the B+ and P+ implanted C60 films show the structural change of the C60 into amorphous carbon. Optical gaps of the implanted films have been observed as a function of implantation dose. The dramatic increase in the conductivity and the reduction in the optical gap on ion implantation are thought to be attributed to an increase in sp2 bounded states, lattice damage, and substitutional impurity doping with ion implantation. The B+ and P+ implantation into C60 and amorphous carbon suggests the possibility of fabricating carbon based homojunction solar cells. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331650
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  • 6
    Electronic Resource
    Electronic Resource
    Prebaking and silicon epitaxial growth enhanced by UV radiation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2224-2229 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: UV light irradiation effects on prebaking and silicon epitaxial growth is studied. An ArF excimer laser, a KrF excimer laser, and a Hg-Xe lamp are used as light sources. The epitaxial growth is carried out using a SiH2Cl2/H2 system under reduced pressure. ArF radiation and Hg-Xe radiation are found to be effective for volatilizing native SiO2 on silicon-substrate surfaces even at low temperatures. When a substrate surface is irradiated with these UV radiations during prebaking and epitaxial growth, epilayer surface morphology and crystalline quality are much improved. Furthermore, the epitaxial growth rate seems to be enhanced photothermally by excimer laser radiations, and photochemically by Hg-Xe radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337983
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  • 7
    Electronic Resource
    Electronic Resource
    Charge transfer adsorption in silicon vapor-phase epitaxial growth (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 390-394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon vapor-phase epitaxial growth with SiH2Cl2 is theoretically studied. The optimized geometries and total energies of the species, generated from SiH2Cl2, are calculated by using an ab initio molecular orbital method. The charge transfer of the interaction between a silicon surface and SiCl2 is considered. Based on the computational result that SiCl−2 has the lower total energy that SiCl2, a new adsorption mechanism, named charge transfer adsorption, is proposed. By using this charge transfer adsorption followed by the surface reaction at the hollow bridge site, the epitaxial growths on the silicon (001), (111), and (110) surfaces are discussed. The epitaxial growths take place in different ways for these three surfaces because of the specific locations of the hollow bridge sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340250
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  • 8
    Electronic Resource
    Electronic Resource
    In situ optical investigation of the etching process in the silicon HCl system (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1216-1218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface reactions in Si(100) etching with HCl gas are studied using the surface photoabsorption (SPA) method and a quadrupole mass spectrometer. The adsorption of Cl atoms on the Si surface causes the intensity of the SPA signal to increase, when HCl gas is supplied. After HCl gas injection is stopped, the signal intensity decreases due to the etching reactions. By studying the time constants and the activation energies, two types of etching reactions are found. Below 1000 K, the etching products are SiCl4, and the activation energy for this etching process is estimated at about 22 kcal/mol. On the other hand, above 1000 K, mainly SiCl2 molecules are desorbed from the Si surface, and the activation energy is evaluated to be 59 kcal/mol.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109776
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  • 9
    Electronic Resource
    Electronic Resource
    Lower-temperature plasma etching of Cu films using infrared radiation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2703-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching of Cu films is achieved at lower temperature (150 °C) with Cl2 plasma by IR light radiation. Anisotropic fine Cu patterns are obtained. The etch rate is 4000 A(ring)/min and there are no microloading effects. It is considered that the etching temperature lowering and the anisotropy are realized by the IR light enhancement of CuClx desorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110401
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  • 10
    Electronic Resource
    Electronic Resource
    Identification and nucleotide sequence determination of the gene responsible for Ogawa serotype specificity of V. cholerae 01
    Amsterdam : Elsevier
    FEBS Letters 286 (1991), S. 159-162 
    Details
    ISSN: 0014-5793
    Keywords: Biosynthesis of lipopolysaccharide ; Deletion plasmid ; O-antigen ; Sequence ; Serotype Ogawa ; V. cholerae
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0014-5793(91)80964-5
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