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  • 1
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    Simulated transition to agropastoralism in the Indus valley 7500-3000 BC (2013)
    PANGAEA
    In:  Supplement to: Lemmen, Carsten; Khan, Aurangzeb (2013): A simulation of the Neolithic Transition in the Indus Valley. In: L. Giosan, D. Q. Fuller, K. Nicoll, R. K. Flad & P. D. Clift (eds.) Climates, Landscapes, and Civilizations; American Geophysical Union, Geophysical Monograph Series, 198, 107-114, https://doi.org/10.1029/2012GM001217
    Details
    Publication Date: 2023-10-28
    Description: The Indus Valley Civilization (IVC) was one of the first great civilizations in prehistory. This bronze age civilization flourished from the end of the fourth millennium BC. It disintegrated during the second millennium BC; despite much research effort, this decline is not well understood. Less research has been devoted to the emergence of the IVC, which shows continuous cultural precursors since at least the seventh millennium BC. To understand the decline, we believe it is necessary to investigate the rise of the IVC, i.e., the establishment of agriculture and livestock, dense populations and technological developments 7000-3000 BC. Although much archaeologically typed information is available, our capability to investigate the system is hindered by poorly resolved chronology, and by a lack of field work in the intermediate areas between the Indus valley and Mesopotamia. We thus employ a complementary numerical simulation to develop a consistent picture of technology, agropastoralism and population developments in the IVC domain. Results from this Global Land Use and technological Evolution Simulator show that there is (1) fair agreement between the simulated timing of the agricultural transition and radiocarbon dates from early agricultural sites, but the transition is simulated first in India then Pakistan; (2) an independent agropas- toralism developing on the Indian subcontinent; and (3) a positive relationship between archeological artifact richness and simulated population density which remains to be quantified.
    Keywords: Archaeosociomodeling; Baluchistan; GLUES; GLUES_IVC; Harappa; Indus Valley; Integrierte Analyse zwischeneiszeitlicher Klimadynamik; INTERDYNAMIK; Mehrgarh; Model; Neolithic; Version 1.1.19; western Eurasia
    Type: Dataset
    Format: application/x-gzip, 92.4 kBytes
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    DATA PANGAEA
  • 2
    Electronic Resource
    Electronic Resource
    Osmium Related Deep Levels in p-InP and their Interaction with Alpha Radiation (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 258-263 (Dec. 1997), p. 831-836 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.258-263.831.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Alpha Radiation-Induced Deep Levels in p-InP (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 258-263 (Dec. 1997), p. 843-848 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.258-263.843.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4263-4268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this defect interacts with the two bands, i.e., is a recombination center trapping alternatively an electron, then a hole. An experiment based on minority carrier capture on a majority trap by the double carrier pulse DLTS technique further supports the evidence that H2 has a large minority carrier capture cross section and is an efficient nonradiative recombination center. Recombination-enhanced defect annealing rates obeys a simple Arrhenius law with an activation enthalpy of 0.51±0.09 eV, in contrast to athermal processes observed in GaP. Detailed analysis of results reveals that the mechanism involved in the minority carrier injection annealing of the H2 defect is energy release mechanism in which enhancement is induced by the energy which is released when a minority carrier is trapped on the defect site. Finally, analysis of the depth profiles data relates that H2 acts as a donor, which partially compensates the acceptors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353806
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  • 5
    Electronic Resource
    Electronic Resource
    Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1170-1178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present extensive systematic study of defect introduction rates as a function of boron, gallium, oxygen, and carbon concentrations by means of deep level transient spectroscopy has drawn a quite complete picture towards the identification of the dominant radiation-induced defects in Si. The radiation-induced defect EV+0.36 eV has been identified as Ci–Oi complexes. The absence of an EC−0.18 eV complex center in gallium-doped samples and the linear dependence of its introduction rates on both the boron and oxygen content fixed its identification as the Bi–Oi complex in boron-doped Si. One of the technologically important results of present study is that the gallium appears to strongly suppress the radiation induced defects, especially hole level EV+0.36 eV (Ci–Oi), which is thought to act as a recombination center as well as the dominant compensating center at EC−0.18 eV (Bi–Oi). As a result, the effects of lifetime degradation and carrier removal could be partially offset to higher radiation fluences by using Ga as a dopant instead of boron in Si space solar cells. The anneal out of the new hole level EV+0.18 eV in gallium-doped samples at around 350 °C, together with recovery of free carrier concentration, suggests that this level may act as a donor-like center which compensates free carrier concentration in gallium-doped Si. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384855
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Influence of the dopant species on radiation-induced defects in Si single crystals" [J. Appl. Phys. 87, 8389 (2000)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3785-3785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290265
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  • 7
    Electronic Resource
    Electronic Resource
    Deep level analysis of radiation-induced defects in Si crystals and solar cells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 217-223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) analysis of radiation-induced defects in p-type Si crystals and solar cells has been carried out to clarify the mechanism of the anomalous degradation of Si n+–p–p+ structure space cells induced by high-energy, high-fluence electron/proton irradiations. A large concentration of a minority-carrier trap with an activation energy of about 0.18 eV has been observed in irradiated p-Si using DLTS measurements, as well as the majority-carrier traps at around Ev+0.18 eV and Ev+0.36 eV, Correlations between DLTS data and solar-cell properties for irradiated and annealed Si diodes and solar cells have shown that type conversion of p-Si base layer from p-type to n-type is found to be mainly caused by introduction of the 0.18 eV minority-carrier trap center, that is, this center acts as a deep-donor center. The Ev+0.36 eV majority-carrier trap center is thought to also act as a recombination center that decreases minority-carrier lifetime (diffusion length). Moreover, origins of radiation-induced defects in heavily irradiated p-Si and generation of deep-donor defect has also been discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370698
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  • 8
    Electronic Resource
    Electronic Resource
    High-energy electron irradiation effects in C60 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4620-4622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the high-energy (1 MeV) electron irradiation effects on C60 films. Fourier transform infrared spectroscopy, Raman spectroscopy, and x-ray diffraction results are consistent and provide clear evidence of the nondestruction of C60 molecules upon irradiation. The presence of C60 signature peaks in the spectra of all three techniques indicates that the C60 films have not been transformed into a hitherto proposed structure of amorphous carbon for low-energy irradiation. A very short collision time mechanism has been proposed to explain the observation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373112
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  • 9
    Electronic Resource
    Electronic Resource
    Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2162-2168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the defect structure of 10 MeV proton irradiated Czochralski-grown Si single crystals and space solar cells with boron-doped p-Si base layer using deep level transient spectroscopy measurements to characterize both vacancy interstitials and their complex-type defects and to monitor their evolution upon annealing at temperatures ≤500 °C. We have observed quite different annealing behavior of the deep levels for conduction-type converted samples (n-type) irradiated at 1×1014 p/cm2 as compared to an intermediate dose of 3×1013 p/cm2. The observed concentrations of the minority carrier level at EC−0.20 eV and the new electron level at EC−0.71 eV that can be seen in type converted samples, have been found to be enough to account for the carrier removal effects. The present study also throws light on the fact that heavy proton irradiation not only changes the structure of the device (from p to n type) but also makes the defect structure complex as compared to the simple defect structure in low dose samples. Isochronal thermal annealing after heavy irradiation provides interesting insight into defect interactions. In particular, the new observed prominent electron level (EC−0.71 eV) in type converted cells exhibits a mutual thermal transformation with hole level (EV+0.36 eV) upon annealing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372156
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of the dopant species on radiation-induced defects in Si single crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8389-8392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observations on deep levels introduced in silicon by 1 MeV electron irradiation are reported using boron- or gallium-doped Czochralski (CZ) grown Si space solar cells with different doping concentrations, deep level transient spectroscopy analysis has been carried out to detect the radiation-induced deep levels. Present results provide evidence for new defect states in addition to those previously reported in gallium- and boron-doped Si. The combined boron and gallium data provide enough information to gain valuable insight into the role of the dopants on radiation induced defects in Si. The dominant donor-like electron level at EC−0.18 eV in boron-doped Si has not been observed in gallium-doped CZ-grown Si. A noticeable suppressing generation of the radiation-induced defects in gallium-doped Si is also observed, especially hole level EV+0.36 eV, which is thought to acts as a recombination center. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373552
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