ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Si, Ge, and Si1−x Gex epitaxial layers and Si/Si1−x Gex superlattices have been obtained on (100) and (111) silicon substrates by molecular-beam epitaxy. The growth processes and the structural characteristics and chemical composition of the structures were studied by x-ray diffraction and Auger spectroscopy. It is shown that under the experimental conditions for obtaining Si/Si1−x Gex superlattices structurally perfect, strained superlattices with satellites up to ±5 orders can be obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187250
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