ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Tantalum-ruthenium diffusion barriers for contacts to SiC were investigated in this work.Stable specific contact resistances of (2 ± 1) x 10-5 Ω cm2 and (4 ± 2) x 10-5 Ω cm2 were measuredon p-type 4H SiC for Al/Ni and Ni ohmic contacts, respectively, when they were beneath Ru-richTa-Ru barriers aged at 350 °C for 3000 h in air. Annealed Ni ohmic contacts on n-SiC aged at350 °C in air for 1000 h (the longest time tested) are also very stable. Pull tests revealed greatlyimproved adhesion between layers in metallization stacks that contained Ta-Ru barriers in place ofpreviously studied Ta-Ru-N barriers. A 5 nm Ta layer inserted between the Ru-rich Ta-Ru barriersand Au was found to further improve the adhesion of the metallization stacks
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.883.pdf
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