ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented indicating that remnant damage retained beneath the surface of GaAs substrates as a result of polishing has an adverse effect on the performance of semiconductor laser diodes. Deep subsurface damage, observed on the etched/polished substrates provided by the crystal manufacturer, can be removed with an extended etch using a bromine-methanol solution or with a noncontact polishing process developed at ARACOR. Data are shown for laser structures with both GaAs and AlxGa1−xAs active layers, grown by molecular beam epitaxy on substrates prepared to compare the effects of the three polishing techniques. Laser structures grown on substrates prepared by bromine-methanol and noncontact polishing show lower threshold current densities and a marked increase in device uniformity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334705
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