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  • 1
    Electronic Resource
    Electronic Resource
    Voltage tunable quantum well infrared detector (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2417-2419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements on a single quantum well infrared detector with its peak responsivity at 5.3 μm show a large Stark shift under bias. The detector has one graded barrier to enhance the effect of an electric field on the subband spacing. Several times greater change in the intersubband transition energy with applied field is obtained this way compared to the square well. Calculations show an even larger Stark shift possible with a stepped well structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102032
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  • 2
    Electronic Resource
    Electronic Resource
    Relationship between trapped holes, positive ions, and interface states in irradiated Si-SiO2 structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2328-2330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that trapped holes at the Si-SiO2 interface account for all of the interface states generated by gate-positive irradiation of metal-oxide-silicon structures. The field-induced conversion of trapped holes to interface states is found to be the rate-limiting step in interface state buildup. Interface-state generation by hole trapping at the Si-SiO2 interface also plays a role for gate-negative irradiation. However, our experiments demonstrate an additional avenue for interface-state formation under these conditions. Holes created in the SiO2 layer are swept to the Al-SiO2 interface where they release positive ions. The transport of these ions to the Si-SiO2 interface under gate-positive field results in new interface states. Our data do not support models involving liberation of protons in the bulk of the SiO2 layer by hole transport through the oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102358
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  • 3
    Electronic Resource
    Electronic Resource
    Surface resonant tunneling transistor: A new negative transconductance device (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 610-612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111065
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  • 4
    Electronic Resource
    Electronic Resource
    Reply to "Comment on ‘A new model of the rapid initial oxidation of silicon' '' (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1610-1611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The inconsistencies with experiment claimed by Y. Z. Lu and Y. C. Cheng, J. Appl. Phys. 64, 1607 (1988), are only apparent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341802
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  • 5
    Electronic Resource
    Electronic Resource
    Performance aspects of a quantum-well detector (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5149-5153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the quantum efficiency and detectivity of an infrared detector based on photoemission from a quantum well are presented. The detector is most efficient when a resonant-extended state exists near the top of the well. The quantum efficiency also increases with increasing electron density. However, due to screening, the absorption peaks at a higher energy than the difference of the energies of the resonant-extended and the bound states by an amount which is proportional to the carrier density in the well. This causes the detectivity (D*) to have a maximum with respect to electron density. We have estimated the dark current and found that, for a GaAs quantum-well detector designed for 10-μm operation, the optimal electron density was 2×1011 cm−2 at 77 K. We have also performed calculations for a quantum-well detector for which the light coupling has been enhanced by incorporating a diffraction grating into the detector. For the stated electron density, we find a D* of 2.8×1011 cm Hz1/2/W and a quantum efficiency of 23%. If the electron density is raised to 8×1011 cm−2, the quantum efficiency rises to 61%, but D* falls to 1.9×1010 cm Hz1/2/W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340417
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  • 6
    Electronic Resource
    Electronic Resource
    Ballistic transport in p-type GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2085-2087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ballistic transport of electrons in the lightly p-type GaAs base of ballistic transistors has been measured at temperatures from 4.2 to 80 K and base lengths of 0.2, 1.7, and 5.7 μm. The transistors have n-type emitters, p-type base and collector with an undoped superlattice as the energy analyzer, and the electron energy is below that of the longitudinal optical phonon. Ballistic transport through the 5.7 μm base device is seen at up to 25 K while in the 0.2 μm transistor ballistic effects persist to liquid nitrogen temperature. A mean free path about 3 μm at 5 K is deduced from the experiments with little change up to 15 K. Calculation shows that neutral impurities dominate the scattering in this temperature range, and the calculated ballistic range of 3.2 μm is in excellent agreement with the experimental results. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124924
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  • 7
    Electronic Resource
    Electronic Resource
    Electron temperature in low-dimensional wires using thermal noise measurements (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 386-388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied electric field heating of low-dimensional electrons in GaAs/AlGaAs heterostructures at 4.2 K using thermal noise measurements. For the two-dimensional (2D) wire, the increase in electron temperature, ΔTe, extracted from noise measurements is in agreement with previous measurements of ΔTe and is explained by emission of acoustic and optical phonons. Measurements are extended to quasi-one-dimensional (Q1D) wires which are shorter than the 2D wires. In these Q1D wires, we find that for small ΔTe, power dissipation is more effective than in the 2D wires, due to additional energy relaxation through the contacts. This effect is most pronounced in the highest mobility wire where the energy relaxation length is the longest. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114637
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence from the two-dimensional electron gas at GaAs/AlGaAs single heterojunctions (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 285-287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied photoluminescence from GaAs/Al0.3Ga0.7 As modulation-doped single heterojunctions, using excitation sources from infrared to ultraviolet near-liquid-helium temperature. The spectra have a strong interface component, accompanied by bulk GaAs and AlGaAs band-gap luminescence. Using ultraviolet instead of infrared as the excitation, the interface signal is greatly enhanced relative to the bulk GaAs luminescence. The interface signal can be shifted to the higher energies when a semitransparent front gate is positively biased. Our observations indicate that the interface luminescence comes from the recombination of the two-dimensional electrons with holes trapped at or near the interface. The peaks and the shoulders in the interface spectra appear to correspond to subbands of the two-dimensional electron gas at the interface. Our results demonstrate the feasibility of doing spectroscopic studies on high-mobility electrons at single heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99915
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  • 9
    Electronic Resource
    Electronic Resource
    Grating enhancement of quantum well detector response (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1027-1029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the enhancement in the response of a quantum well infrared detector by the incorporation of a metallic diffraction grating into the structure. We find an enhancement ratio of about 30, and its spectrum indicates that waveguiding of diffracted light occurs within the sample. Strong coupling to evanescent modes of the grating is not observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100054
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  • 10
    Electronic Resource
    Electronic Resource
    Photovoltaic quantum well infrared detector (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1701-1703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99022
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