Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1882-1884
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Real index-guided buried ridge InGaAlP 650 nm band lasers with p+–n+ buried tunnel junctions are demonstrated. Located on top of the buried ridges, the tunnel junctions, made of InGaAs/GaAs superlattices with modulation doping, were introduced as the current injection window areas. The large band gap In0.5Al0.5P layers were directly regrown around the ridges using metalorganic chemical vapor deposition to serve as the current blocking layers. Real index optical waveguiding in the lateral direction was also provided by the smaller refractive index of In0.5Al0.5P layers. The lasers showed lower threshold current and higher slope efficiency compared to conventional complex index-guided InGaAlP lasers with GaAs current blocking layers, and had low internal loss of about 5.4 cm−1. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1459763
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