ISSN:
1432-0630
Keywords:
PACS: 78.55.Cr; 78.66.Fd; 42.65.Pc
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Photoluminescence (PL) measurements under different excitation powers were carried out at low temperature on tensile-strained In0.3Ga0.7As single wells of 6 nm with InGaAs barriers lattice matched to InP substrate. PL measurements taken at 2 K show a main emission band at 0.762 eV probably originating from a type-II transition. The insertion of an ultrathin InAs layer at In0.3Ga0.7As on In0.53Ga0.47As interface reveals an additional feature at 0.711 eV as well as an excited-state luminescence emission at high pump powers. The InAs insertion improves heterointerface quality, which was confirmed by an increase in PL intensity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050045
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