Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1174-1176
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial rutile-TiO2 and anatase-TiO2 films were grown at 800 °C on Al2O3(1¯102¯) and LaAlO3(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO2 and anatase-TiO2 films on conductive RuO2 and La0.5Sr0.5CoO3 electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO2 film grown on RuO2 showed a very broad peak in the visible light region. An epitaxial anatase-TiO2 film grown on La0.5Sr0.5CoO3 showed a strong peak with a threshold energy of 3.05 eV. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1450249
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