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  • 1
    Electronic Resource
    Electronic Resource
    Making brand equity a key factor in M&A decision-making (2004)
    Bradford : Emerald
    Strategy & leadership 32 (2004), S. 20-27 
    Details
    ISSN: 1087-8572
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: Brand is a strategic asset that should be managed. This is an increasingly important issue for businesses that favor or have favored acquisition-based growth strategies. To ensure optimal strategic value from the brands they are buying and selling, just calculating brand value does not suffice. They need a process for integrating brand and corporate finance M&A practices and for determining how to brand the acquired company and how to manage the migration of the brand to the new company. The imperative is to ensure that customers remain happy and loyal to the brand. This article offers a guide to equip acquiring companies with a framework for incorporating brand evaluation and brand strategy into the M&A transaction process. It helps non-marketers and marketers alike better understand how to conduct marketing due diligence before the deal; think about brand strategy in the context of a portfolio; establish brand migration plans to help maximize the value of brand in the deal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/10878570410525098
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  • 2
    Electronic Resource
    Electronic Resource
    Efficient phosphorus doping of amorphous silicon carbide films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1639-1640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on improved phosphorus incorporation in amorphous SiC films as measured by the dc conductivity and activation energy. In this process, we show that preheating of the gas mixture is an important process parameter which leads to improved impurity incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102223
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  • 3
    Electronic Resource
    Electronic Resource
    Second harmonic generation as a sensitive technique for estimating Hc1 of high Tc materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1539-1541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and interesting technique for measuring the Hc1 of the superconducting grains in bulk high Tc superconductor (HTSC) samples is presented herein. This technique takes advantage of interesting history effects observed in the nonlinear magnetic response of HTSC samples. The hysteretic second harmonic magnetization shows sharp structure at low applied fields due to the magnetic flux trapped inside the grains. This feature is used to track the penetration of magnetic field inside the superconducting granular regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354049
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  • 4
    Electronic Resource
    Electronic Resource
    Current transport in a-Si:Ge alloy Schottky barriers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1996-1999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, we have investigated the temperature dependence of forward and reverse currents of a-Si:Ge:H-Pd barriers. In contrast to a-Si:H, we find that the diode quality factor is 2 and is independent of temperature. We have confirmed quantitatively that the forward current is recombination limited and the reverse current is generation limited. The barrier height ΦB=0.7 eV, which is half the measured optical gap. The frequency, bias, and temperature dependence of capacitance have also been investigated. From the capacitance measurements, we infer that the density of states near midgap is approximately 2×1017 cm−3 eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342890
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  • 5
    Electronic Resource
    Electronic Resource
    Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1835-1840 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A procedure for choosing the appropriate chopping frequency (f) for the surface photovoltage spectroscopy (SPS) measurements in order to obtain the absorption related features is presented. We could obtain the absorption edge of thick n+ GaAs wafer (thickness (approximate)700 μm) by performing SPS measurements at f≥1 kHz at room temperature (300 K). The similar information for semi-insulating (SI) GaAs could not be obtained due to the carrier trapping at deep levels or surface states at 300 K. However, we could obtain the absorption edge of SI-GaAs by performing SPS measurements at 395 K at f=3 kHz. Here, we demonstrate the capability of the SPS technique to measure large absorption coefficient (α) values for thick wafers by performing SPS measurements and normalizing this with the reported α value at one wavelength in the above band gap region. For comparison, we also perform quasisimultaneous SPS and transmission spectroscopy (TS) measurements. The SPS technique could provide α values up to 104 cm−1 for 700-μm-thick GaAs wafers, whereas TS could only measure α values up to about 15 cm−1. An improved design of the sample holder for measuring the surface photovoltage in the chopped light geometry, which increases the signal strength by reducing the gap between the top electrode and the wafer in a controlled manner, is presented. This ensures that there is no sample damage or contamination. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1449461
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  • 6
    Electronic Resource
    Electronic Resource
    Study of surface photovoltage in hydrogenated amorphous silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3798-3808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface photovoltage (SPV) in hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and wavelength, intensity and chopping frequency of light. Effects of surface treatments on SPV, including etching and exposure to moisture, are also studied. It is concluded that SPV cannot be directly related to the band bending at the surface of a-Si:H. By solving Poisson's equation in dark and light, it is shown that in a material such as a-Si:H, the observation of a finite SPV necessarily implies a transfer of charge between the surface states and the space-charge region. This explains our experimental observations since it means that SPV measurement may not be relied upon to give the surface potential of a-Si:H. Notwithstanding this handicap, it is shown that by measuring SPV and conductance on an a-Si:H sample subjected to cycles of moisture and light soaking, we can conclude that light soaking affects the surface as well as the bulk of a-Si:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335594
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  • 7
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy of semi-insulating GaAs in the 800–1100 nm range (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface photovoltage spectroscopy (SPS) studies on thick semi-insulating (SI) GaAs wafers have been done in the range 800–1100 nm using chopped light geometry. SPS peaks at 880 nm, 900 nm, and a broadband in the range 930–1080 nm have been observed. These observations are important as SPS is routinely used to study absorption-related features in InAs self-organized quantum dots grown on SI GaAs. The effect of the ambient and chopping frequencies on SPS spectra is also presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402657
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  • 8
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy of n-n+ and p-n+ AlGaAs/GaAs heterojunctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3020-3022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of n-n+ and p-n+ semiconductor heterojunctions has been done using the surface photovoltage spectroscopy (SPS) in the chopped light geometry. Heterojunctions n-Al0.4Ga0.6As/n+ GaAs and p-Al0.37Ga0.67As/n+ GaAs and substrate n+ doped GaAs have been studied in the wavelength range 600–1000 nm. A sharp decrease in SPS at the band-gap energies of AlGaAs and GaAs with a broad peak in the subband-gap region of GaAs has been observed. The magnitude of surface photovoltage (SPV), for a constant photon flux for n-n+ samples, is less by more than two orders of magnitude than that for p-n+ samples in the wavelength range 645–870 nm. Changes in the dipole moments due to the redistribution of excess carriers in the space-charge regions are in opposite directions of the n-n+ heterojunctions giving less SPV, while for p-n+ heterojunction, the changes in the dipole moments are in the same direction giving more SPV in comparison to the n-n+ samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121527
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for the role of the surface potential and native oxide on thermal properties of crystalline Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3546-3548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal properties of crystalline Si have been studied using the photopyroelectric (PPE) technique in the temperature range 100–300 K. It has been observed that the generation and propagation of the thermal waves in Si depends upon the thermal history of the sample. The native amorphous silicon dioxide layer on Si and the surface potential affect the propagation of the thermal waves and this effect is not reversible in the temperature range 150 K〈T〈260 K. It is observed that the contactless PPE technique can also be used to study recombination processes of excess carriers in semiconductors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117240
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  • 10
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    Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications (2015)
    American Institute of Physics
    Details
    Publication Date: 2015-10-28
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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