Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 3020-3022
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A comparative study of n-n+ and p-n+ semiconductor heterojunctions has been done using the surface photovoltage spectroscopy (SPS) in the chopped light geometry. Heterojunctions n-Al0.4Ga0.6As/n+ GaAs and p-Al0.37Ga0.67As/n+ GaAs and substrate n+ doped GaAs have been studied in the wavelength range 600–1000 nm. A sharp decrease in SPS at the band-gap energies of AlGaAs and GaAs with a broad peak in the subband-gap region of GaAs has been observed. The magnitude of surface photovoltage (SPV), for a constant photon flux for n-n+ samples, is less by more than two orders of magnitude than that for p-n+ samples in the wavelength range 645–870 nm. Changes in the dipole moments due to the redistribution of excess carriers in the space-charge regions are in opposite directions of the n-n+ heterojunctions giving less SPV, while for p-n+ heterojunction, the changes in the dipole moments are in the same direction giving more SPV in comparison to the n-n+ samples. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121527
Permalink
|
Location |
Call Number |
Expected |
Availability |