ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effects of argon and nitrogen bombardment of 3C-SiC surfaces at acceleration voltagesbelow 2 keV were studied by stylus profilometry, reflectometry, reflection high energy electrondiffraction and Auger electron spectroscopy (AES). The erosion rate of the SiC surface wasdetermined. It was found that the sputtering rate for argon was three times higher compared to nitrogen.AES measurements revealed argon and nitrogen incorporation at a depth of a few nanometersas well as stoichiometric changes at the same depth scale independent of the acceleration voltage.In the case of the interaction of nitrogen ions with the 3C-SiC surface the formation of a SiCNalloywas detected
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.685.pdf
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