ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel platereactor in plasma etching mode and SF6 at elevated substrate temperatures. It was observed to beremarkable at substrate temperatures above 350°C. The influence of chamber pressure, maskingmaterials, rf-power and substrate temperature were analyzed. Thereby, 8.5° off-axis oriented 4HSiCwafers exhibit a larger vertical and lateral etching rate compared to on-axis oriented SiCwafers. Additionally, the erosion of nitrogen containing masking material results in a reduction ofthe etching rates
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.651.pdf
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