ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have investigated the influence of surface modification on the electrical properties ofSiC diodes. Schottky diodes (SBDs) as well as PiN diodes were fabricated on n-type SiC substratewith an epilayer, and electrically characterized before and after high temperature annealing, and afterremoving the surface modified layer, respectively. The devices annealed without graphite cap layershowed ohmic behavior. The surface layer was modified to a conductive layer possibly due to thepreferred sublimation of Si species. In order to confirm the existence of modified surface conductivelayer, diode was fabricated on the same substrate and electrically characterized after removing30nm-thick damaged layer by ICP-RIE. The leakage current reduced dramatically, as much as 7orders of magnitude. The PiN diodes fabricated on the damaged surface layer showed the reverseleakage current and the breakdown voltage of 50mA and 1250V, respectively. While those of thediode fabricated after removing the damaged surface layer were 200nA at the breakdown voltage of2100V, respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.595.pdf
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