ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper demonstrates the breakdown voltage characteristics of different edgetermination structures including aluminum (Al)-deposited guard ring and Al-deposited guard ringassistedfield limiting ring (FLR) for a 4H silicon carbide (SiC) Schottky barrier diode (SBD). Inorder to investigate the application feasibility of the Al-deposited junction termination to a highbreakdown voltage SiC-SBD, two types of SiC-SBDs are fabricated using conventionalphotolithography, electron beam evaporation, and thermal treatment techniques without ionimplantation and thermal oxidation procedures. The breakdown voltage characteristics of the SiCSBDsare significantly dependent on the Al-deposited edge termination. The SiC-SBD without theAl-deposited edge termination shows less than 250 V breakdown voltage, while the Al-depositedguard ring and Al-deposited guard ring-assisted FLR structures show roughly 700 V and 1200 Vbreakdown voltages, respectively. The prominent improvement in the breakdown voltagecharacteristics is attributed to the electric field lowering at the Schottky contact edge by the Aldeposition edge termination
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.861.pdf
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