ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Vertically aligned GaN nanocolumn arrays were grown by molecular beam epitaxy onGallium coated silicon substrate. The dense packing of the NCs gives them the appearance of acontinuous film in surface view, but cross-sectional analysis shows them to be isolatednanostructures. The GaN nanocolumns have uniform diameters of 85 nm, lengths up to 720 nm andpossess a pyramid like tip. Photoluminescence measurements of NCs show excitonic emission witha dominant, narrow peak centered at 363 nm and FWHM of 68 meV. From the Raman spectrum,peaks at 566.9 and 730 cm-1 are assigned to the E2 and A1(LO) GaN phonons modes which clearlyindicates that the grown nanocolumns are highly crystalline. The grown nanocolumns are highlyoriented and perpendicular to the growth surface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.120.pdf
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