ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper presents the Raman scattering characteristics of poly 3C-SiC thin filmsdeposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) usinghexamethyldisilane (MHDS) and carrier gases (Ar + H2). The Raman spectra of SiC films depositedon AlN layer of before and after annealings were investigated according to the growth temperature of3C-SiC. Two strong Raman peaks, which means that poly 3C-SiC admixed with nanoparticle graphite,were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from theRaman shifts of 3C-SiC deposited at 1180 °C on AlN of after annealing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.505.pdf
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