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  • 1
    Electronic Resource
    Electronic Resource
    Damage of silicon induced in low-energy CF4 discharges (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1589-1590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage of silicon induced by low-energy (30 eV) CF4 discharges in a rf hollow oval magnetron system has been studied. The damage level was evaluated by the surface trap density measured by the high-low frequency capacitance-voltage method. By comparison with the results obtained using low-energy Ar discharges and other high-energy (450 eV) CF4 and Ar discharges, the involatile reaction residue was inferred as the major cause of damage in the low-energy CF4 discharges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341793
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared studies of room temperature deposition of hydrogenated silicon oxide films in rf magnetron discharges (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3342-3347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of a-SiOx:H thin films deposited at low temperature (∼ 50 °C) in a low energy magnetron rf plasma system with Ar/SiH4/O2 gas mixtures are investigated. In the low pressure regime (about 5 mTorr reactive gases), the surface reaction dominates in the film formation process. As the partial pressure ratio (ROS) of oxygen to silane increases, the Si-H related vibrational modes gradually disappear, and the film becomes stoichiometric SiO2 for ROS≥1. High quality oxide film can be deposited due to the low pressure environment and the plasma promoted surface process. In the high pressure regime (tens of mTorr) the deposited SiO2 films contain fine particles (tens of nanometer in size) and are porous (15% void) due to the gas phase homogeneous reaction and aggregation. The infrared absorbance spectra with normal and oblique incidence imply different origins of the half width and the shoulder intensity of the 1070 cm−1 Si-O(s) mode. In comparison with the low pressure dense films, the narrow half width of the high pressure film may be caused by the more ordered local structure which has a narrower distribution of bond angle and length, while the large shoulder intensity may be dominated by the larger (fine particle size) scale disorder. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360028
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of rf magnetron plasma on the particle size distribution in laser ablation deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 489-493 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the externally introduced rf magnetron plasma on the particle size distribution on films deposited by pulsed laser ablation is investigated. A cw low energy magnetron rf plasma is sustained between the target and the substrate during the laser ablation deposition process. The ablated droplets can be negatively charged and filtered by the plasma. For Si and Al target ablation, the filtering efficiency of the inert Ar plasma is about 20%, and is independent of the ejected particle size in our system. If oxygen is introduced into the plasma to deposit oxide thin films, the oxidation of the target surface in the reactive plasma changes the size distribution of the ejected particles, and largely reduces the average size of the ejected particles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360632
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6852-6854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a-SiOX:H (0≤X≤2) films is investigated by alternate deposition and post-deposition Ar plasma treatment processes in a rf hollow oval magnetron system using an in situ ellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360448
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  • 5
    Electronic Resource
    Electronic Resource
    Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2030-2032 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel low-temperature (〈50 °C) deposition process of a thin SiO2 film in a low-energy "rf hollow oval magnetron'' system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure ((approximately-less-than)10 mTorr). The high electron density (1011 cm−3 ) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 A(ring)/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100493
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  • 6
    Electronic Resource
    Electronic Resource
    Fine silicon oxide particles in rf hollow magnetron discharges (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4741-4745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation and the properties of fine silicon oxide particles in a hollow post-type rf magnetron discharge in SiH4/O2/Ar gas mixtures were studied. For P(approximately-greater-than)30 mTorr, primary fine particles (PFPs) with a diameter of about 20 nm are formed through homogeneous reactions. Their diameter increases with the system pressure. PFPs with sufficient negative charge are suspended in the plasma. They can further aggregate with other PFPs to form aggregated fine particles (AFP) with nearly spherical shape and larger diameter. The size of the AFP depends on the duration of the rf power. In the cw mode, AFPs gradually drift axially to both ends of the discharge system. The accumulation of AFPs at the end trap causes low-frequency oscillation of the discharge. The films consisting of fine particles are loose and brittle. Infrared-absorption spectrum shows that oxide formed in the homogeneous reaction has similar Si—O bond strain relaxation to that of the thermal oxides and the annealed oxide from chemical-vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354343
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  • 7
    Electronic Resource
    Electronic Resource
    Hollow oval magnetron for large-area low-energy ions (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1949-1951 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel device, the "hollow oval magnetron,'' was designed and characterized. The device has a hollow electrode with an oval cross section. It sustains a large-area uniform plasma with low-energy ions under low pressure and moderate rf power (Ni ∼1011 cm−3, Γi ∼0.5 mA/cm2, Ei ∼30 eV, and P∼5 mTorr). The energy distribution of ion current onto the hollow electrode has a broad spread ΔEi /E¯i ∼1 in the rf mode, and a narrow peak ΔEi/ E¯i ∼0.1 with a low-energy tail in the dc mode. The device is a good candidate for low-energy high-rate plasma-material processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337195
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  • 8
    Electronic Resource
    Electronic Resource
    Steady-state rf magnetron discharges (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2981-2987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the steady-state discharges and the spatial distributions of plasma parameters vertical to the magnetic field was made in an rf magnetron with oval cross section. Langmuir probes were used for the major diagnostics. The device generates low-ion energy, high-ion flux stable plasma (Ei∼102 eV, Γi∼5 mA/cm2 at 1 W/cm2 rf power). Ion transport toward the positive sheath is enhanced by the rf induced dc electric field in the uniform glow. The state of the glow is independent of rf power except ion density ni∝ (rf power)α. The voltage drop across the sheath follows V∝(rf power) β with 0〈α〈β〈1. The discharge strongly depends on magnetic field strength and system pressure, and weakly depends on the gas chemistry. Generally, the state of the discharge is determined by charged particle generation, transport and loss processes, and in turn controlled by the system operating parameters. The experimental results obey the conservation laws and the steady-state criterion. The correlations between plasma parameters and system parameters are investigated and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335847
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  • 9
    Electronic Resource
    Electronic Resource
    Ionization-drift turbulence in rf magnetron plasmas (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4077-4083 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron density fluctuations in a rf hollow magnetron system are investigated. The weakly ionized and axially magnetized (B∼80 G) discharge supports nonlinear ionization-drift waves in the presence of the nonuniform rf-induced dc electric field and density gradient along the normal of the hollow electrode surface. The fluctuations have good coherence along B and are turbulent in the transverse plane. The turbulence is inhomogeneous along the density gradient. The power spectrum shows two major bands. The amplitude of the high-frequency oscillation is modulated by the low-frequency oscillation. In the transverse plane, the phase velocity is about the same as the diamagnetic drift velocity. It has one component along the diamagnetic drift direction and the other toward the electrode surface. The turbulence also induces anomalous cross-field electron current which deteriorates the electron confinement in the low-pressure regime. Generally, the system combines the nature of the reaction diffusion and the drift systems. The ionization process, the nonlinear transverse drifts under the nonlinear background, and the nonlinear wave-wave interactions drive the system to turbulence. The parametric dependence of the turbulence is studied and discussed in the paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339120
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  • 10
    Electronic Resource
    Electronic Resource
    SiO2 thin film deposition by radio frequency oxygen plasma enhanced laser ablation from Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2475-2477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel process of room temperature deposition of thin SiO2 film by laser ablation from a c-Si target in a low pressure (〈5 mTorr) rf oxygen magnetron plasma background was developed. The gas phase reactions which usually dominate in other high pressure reactive ablation processes are suppressed and the energetic particles from the target have good transport to the substrate in the low pressure background. The surface reactions are continuously enhanced after the arrival of Si particles by the high fluxes of oxygen radicals and ions from the steady state magnetron discharge. The deposition of stoichiometric, less disorder, dense, and water free films are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110797
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