Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 2251-2255
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Two thermostable levels E(0.31) and E(0.58) related to Rh in Si were observed using deep level transient spectroscopy and double correlation deep level transient spectroscopy techniques. By means of thermal annealing and electron irradiation, the microscopic natures of these levels were identified for the first time. The levels E(0.31) and E(0.58) arise from by the same impurity center but have different charge states. Their microstructures are not related to a pure substitutional Rh atom, but correspond to a complex. This result is compared to our self-consistent theoretical calculation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348704
Permalink
|
Location |
Call Number |
Expected |
Availability |